IRLU8743PBF

Vgs(th) (Max) @ Id:	2.35V @ 100µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	135W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4880pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	59nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	160A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRLU8743PBF - an Introduction to Single Application Fields and Working Principles

IRLU8743PBF is a single N-Channel Enhancement Mode Power MOSFET transistor manufactured by International Rectifier. It is a high-speed switching transistor with an integrated dielectric isolation layer that not only allows it to operate at high frequencies and temperatures but also has the ability to isolate signals within a circuit. It is a versatile transistor that can be used in a variety of consumer electronics and industrial applications. The IRLU8743PBF is constructed from silicon wafers, utilizing a combination of Schottky and metal-oxide-semiconductor (MOS) transistors on a single chip. The integrated isolation layer between the source and drain terminals allows the transistor to switch quickly and reliably at higher frequencies and temperatures. In addition, it has an extremely low on-resistance enabling it to manage high currents with minimal voltage loss and maintain electrical isolation between opposing terminals. One of the most notable features of the IRLU8743PBF is its ability to eliminates cross-conduction due to its integrated dielectric isolation layer. This feature helps to minimize the chance of electrical damage and hazards in applications where two opposing terminals are used, such as when driving inductive loads. Additionally, this feature enables the transistor to safely dissipate charges without causing unnecessary current flow or damage. The IRLU8743PBF can be used across a broad range of applications, including power supplies, servo motors and motion control systems. It makes an excellent choice for dc-dc converters, LED drivers, motor control systems and medical equipment, among other devices and applications. Additionally, it is extensively used in smart home devices, such as alarm systems and door locks. In terms of its working principle, the IRLU8743PBF operates very similarly to other MOSFET transistors. When a gate voltage is applied, charge carriers are drawn from the source to the drain and the channels are opened up, allowing current to pass through. The gate voltage can be controlled to adjust the width of the channels and fine-tune the current levels accordingly. When the gate voltage is fixed, the difference in voltage between the source and drain passes a certain amount of current through the device. As the source-drain voltage increases, the current level does as well. By controlling the gate voltage, the amount of current is regulated, allowing for smooth and consistent current flow. In summary, the IRLU8743PBF is a versatile single-channel N-Channel Enhancement Mode Power MOSFET transistor manufactured by International Rectifier. It has the ability to switch quickly and reliably at high frequencies, temperatures and current levels, making it an effective transistor for various applications. Its integrated dielectric isolation layer eliminates cross-conduction, provides electrical isolation between opposing terminals and dissipates charges without risk of damage. Its operation is similar to that of other MOSFET transistors, with adjustments to the gate voltage allowing for finely-tuned current levels.

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