![IRF640NL Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRF640NL-ND |
Manufacturer Part#: |
IRF640NL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 18A TO-262 |
More Detail: | N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF640NL is a single-chip field-effect transistor (FET) designed for use in linear and switching applications. It has a N-channel lattice, an all-metal construction, and an external resistor, while being one of the best selling power FETs on the market today.
The IRF640NL is a voltage-controlled device, acting as an electronic switch to control currents between two points. It has an insulated gate, through which current can pass from source to drain when the gate is activated by a voltage signal. The source terminals act as an on-off switch for the circuit.
The IRF640NL device is typically used in switches, amplifiers, voltage regulators, motor control, and audio applications. It has impressive performance characteristics, such as low ON-state resistance, fast switching times, and excellent thermal performance. It is able to handle a maximum drain-source voltage of 100V with a gate-source voltage of 20V. The device is also able to handle up to 12A of continuous drain current, with a maximum of 17A when switching.
The IRF640NL is designed to have a 47V breakdown voltage, and a maximum transconductance of 74 mS with an input capacitance of 450 pF. Additionally, it can handle up to a maximum power dissipation of around 40W, allowing for reliable and long-lasting use. Its total gate charge of 14 nC makes it suitable for use in fast switching applications.
In terms of its working principle, the IRF640NL is a voltage-controlled device, meaning that it can be used to switch currents between two points. Its operation is based on voltage, with the gate acting as an on-off switch for the current. When the gate is open, current can flow from the source to the drain. When the gate is closed, current is blocked. Thus, the IRF640NL acts as an electronic switch to control the flow of current between two points.
The IRF640NL is a popular choice for circuit designers due to its combination of performance characteristics and ease of use. Its low on-state resistance and its ability to handle fast switching make it ideal for use in a variety of applications. Its impressive power dissipation capabilities, along with its wide range of breakdown voltages, allow it to be used as a reliable and dependable part for both linear and switching applications.
The specific data is subject to PDF, and the above content is for reference
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