Allicdata Part #: | IPD096N08N3GATMA1TR-ND |
Manufacturer Part#: |
IPD096N08N3GATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 73A |
More Detail: | N-Channel 80V 73A (Tc) 100W (Tc) Surface Mount PG-... |
DataSheet: | IPD096N08N3GATMA1 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3.5V @ 46µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction:IPD096N08N3GATMA1 is a single Mosfet that is widely used in industrial and electronic applications. This device is a 3-pin, dual-MOSFET switch ideal for driving high-current loads. It features a low RDS(on) of 4.65 mΩ at 10V and a maximum gate threshold voltage (Vgs) of 15V.
Application Field: IPD096N08N3GATMA1 is widely used in switching applications such as motor control, relay drivers, DC/DC converters, and AC/DC power supplies. The high-current switch can also be used to drive solenoids, lamps and actuators. This device provides fast switching speeds for efficient control in power conversion applications.
Pinout Diagram:
The pinouts of the IPD096N08N3GATMA1 are as follows:
- G: Gate
- D: Drain
- S: Source
The drain and source are the two output pins and the Gate pin is the control pin.
Working Principle:The IPD096N08N3GATMA1 is a single MOSFET switch. It is a voltage-controlled device, meaning that it is activated by applying a voltage to the gate terminal. When the Gate pin is high (more than 4V), the MOSFET turns on and allows a current to flow between the Drain and Source terminals. When the voltage is low (less than 4V), the MOSFET is off and does not allow a current to flow.
The IPD096N08N3GATMA1 is capable of driving large currents because of its low RDS(on) of only 4.65 mΩ at 10V. This means that it can handle large amounts of power without significant losses due to heating. It also has a fast switching speed of 10ns, which is ideal for applications that require fast response times.
Advantages:The IPD096N08N3GATMA1 has several advantages. It has a low RDS(on) and fast switching speed, allowing it to drive large amounts of power efficiently. The gate threshold voltage (Vgs) of 15V ensures that the device can be driven by voltage sources with high voltage swings. This device also has a 3-pin design, which makes it easier to install.
Disadvantages:One of the main disadvantages of the IPD096N08N3GATMA1 is its limited operating temperature range. This device can only handle temperatures up to 175°C, which can be an issue in some applications. Additionally, the device comes in a 3-pin package, which may limit its usability in tight spaces.
Conclusion:The IPD096N08N3GATMA1 is a single MOSFET switch ideal for driving high-current loads. This device has a low RDS(on) of 4.65 mΩ at 10V and a gate threshold voltage (Vgs) of 15V, allowing it to handle large amounts of power without significant losses. Additionally, this device has a fast switching speed of 10ns for efficient control in power conversion applications. The main drawbacks of the IPD096N08N3GATMA1 are its limited operating temperature range and 3-pin package.
The specific data is subject to PDF, and the above content is for reference
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