IPP65R065C7XKSA1 Allicdata Electronics
Allicdata Part #:

IPP65R065C7XKSA1-ND

Manufacturer Part#:

IPP65R065C7XKSA1

Price: $ 3.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V TO-220-3
More Detail: N-Channel 650V 33A (Tc) 171W (Tc) Through Hole PG-...
DataSheet: IPP65R065C7XKSA1 datasheetIPP65R065C7XKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 3.45696
Stock 1000Can Ship Immediately
$ 3.84
Specifications
Vgs(th) (Max) @ Id: 4V @ 850µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 171W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: CoolMOS™ C7
Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP65R065C7XKSA1 is a silicon N-channel MOSFET of the 2700V power sphere family. It has a fast switching speed, excellent logic level gate drive, and a low RDS(on) of 0.65 Ω. It is useful in applications such as motor drives, power supplies and motor control systems.

The MOSFET works on the principle of the metal-oxide-semiconductor field effect transistors (MOSFETs). The MOSFET has four terminals: the drain (D), the gate (G), the source (S) and the body(B).The body is usually connected to the source by a MOhm resistance and acts as a substrate for the mobile charge carriers between source and drain. A conductive gate terminal sits between the source and drain and is controlled by an external voltage.

The drain-source current (ID) depends upon the current going through the gate-source. The gate voltage alters the channel gate and this alters the ID as a function of the gate-source voltage (VGS). The higher VGS is, the lower the RDS is and vice-versa.

The IPP65R065C7XKSA1 has a breakdown-voltage (VD) of 2700V, making it an excellent choice for voltage-sensing applications that require the MOSFET to be exposed to high voltage pulses. It has low capacitive values of gate-drain and gate-source capacitances (CGS and Cgd), which is beneficial in noise reduction, and also has very low "on" resistance.

Due to its high-voltage rating and excellent switching performance, the IPP65R065C7XKSA1 is suitable for use in motor drives, power supplies and motor control systems. This makes it an ideal choice for situations where high-power motors must be turned on and off rapidly, and accurate control of the motor speed is required.

In addition, the IPP65R065C7XKSA1 is also useful for power circuits that require high voltage switching. Its low RDS(on) and fast switching speed ensure that the circuit is efficient and eliminates power loss due to heating resulting from high current switching.

Overall, the IPP65R065C7XKSA1 is a cost-effective and reliable choice for applications that require high voltage switching and excellent motor control. Its low RDS(on), fast switching speed, and breakdown voltage of 2700V make it a great choice for applications in the motor drive, power supply, and motor control market.

The specific data is subject to PDF, and the above content is for reference

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