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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRLI520N-ND	IRLI520N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
IRLIZ44NPBF-ND	IRLIZ44NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1684 Order	--
IRFI4110GPBF-ND	IRFI4110GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9540pF @ 50V Power Dissipation (Max): 61W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	3231 Order	--
IPA95R750P7XKSA 1-ND	IPA95R750P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 220A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 400V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $1.4049 10+: $1.2669 100+: $1.0182 500+: $0.7919 1000+: $0.6562
IPA60R280P7XKSA 1-ND	IPA60R280P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 190A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 761pF @ 400V Power Dissipation (Max): 24W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	479 Order	1+: $1.5057 10+: $1.3627 100+: $1.0951 500+: $0.8518 1000+: $0.7057
IPA80R460CEXKSA 1-ND	IPA80R460CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460 mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 680A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPA70R600P7SXKS A1-ND	IPA70R600P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V Power Dissipation (Max): 25W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	388 Order	1+: $0.7119 10+: $0.6325 100+: $0.4997 500+: $0.3875 1000+: $0.3059
IRFI4228PBF-ND	IRFI4228PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V Power Dissipation (Max): 46W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1943 Order	--
IPAN70R450P7SXK SA1-ND	IPAN70R450P7SXK SA1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120A Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 400V Power Dissipation (Max): 22.7W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	478 Order	1+: $0.7938 10+: $0.7018 100+: $0.5547 500+: $0.4302 1000+: $0.3396
IPA80R1K2P7XKSA 1-ND	IPA80R1K2P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 80A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	480 Order	1+: $1.0143 10+: $0.8984 100+: $0.7102 500+: $0.5508 1000+: $0.4348
IPA60R280P7SXKS A1-ND	IPA60R280P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 190A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 761pF @ 400V Power Dissipation (Max): 24W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	184 Order	--
IRLIZ34N-ND	IRLIZ34N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
IPAN70R360P7SXK SA1-ND	IPAN70R360P7SXK SA1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V Power Dissipation (Max): 26.5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $0.4918
SIHA15N60E-E3-N D	SIHA15N60E-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	15 Order	1+: $2.2239 10+: $2.0084 100+: $1.6138 500+: $1.2552 1000+: $1.04
IRLI3803-ND	IRLI3803	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
SIHF7N60E-E3-ND	SIHF7N60E-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	205 Order	1+: $1.7388 10+: $1.57 100+: $1.2617 500+: $0.9813 1000+: $0.8131
IPAN80R280P7XKS A1-ND	IPAN80R280P7XKS A1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 360A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	367 Order	1+: $2.1294 10+: $1.8988 100+: $1.557 500+: $1.2608 1000+: $1.0633
SIHA25N50E-E3-N D	SIHA25N50E-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1000+: $1.1665
IPA65R650CEXKSA 1-ND	IPA65R650CEXKSA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1494 Order	1+: $0.819 10+: $0.7245 100+: $0.5724 500+: $0.4439 1000+: $0.3505
IRFI4510GPBF-ND	IRFI4510GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2998pF @ 50V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	586 Order	1+: $1.4049 10+: $1.2682 100+: $1.0188 500+: $0.7924 1000+: $0.6566
IRLI540N-ND	IRLI540N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IPA65R190E6XKSA 1-ND	IPA65R190E6XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 730A Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $1.3667
SIHF16N50C-E3-N D	SIHF16N50C-E3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1000+: $2.3532
IPA95R1K2P7XKSA 1-ND	IPA95R1K2P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 478pF @ 400V Power Dissipation (Max): 27W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	500 Order	1+: $1.2033 10+: $1.0679 100+: $0.844 500+: $0.6545 1000+: $0.5168
SIHF12N60E-GE3T R-ND	SIHF12N60E-GE3	Vishay Siliconix	View more Series: E Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Power Dissipation (Max): 33W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	--
SIHF15N65E-GE3- ND	SIHF15N65E-GE3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	--
SIHA15N65E-GE3- ND	SIHA15N65E-GE3	Vishay Siliconix	View more Series: E Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $2.3184 10+: $2.0683 100+: $1.6962 500+: $1.3735 1000+: $1.1583
497-15115-5-ND	STF24N60DM2	STMicroelectronics	View more Series: FDmesh II Plus Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 100V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $3.0429 50+: $2.4452 100+: $2.2279 500+: $1.804 1000+: $1.5215
IPAN70R750P7SXK SA1-ND	IPAN70R750P7SXK SA1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70A Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V Power Dissipation (Max): 20.8W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0.6678 10+: $0.5928 100+: $0.4686 500+: $0.3634 1000+: $0.2869
IPA50R800CEXKSA 2-ND	IPA50R800CEXKSA 2	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.5A, 13V Vgs(th) (Max) @ Id: 3.5V @ 130A Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V Power Dissipation (Max): 26.4W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $0.3153
IRFIZ48N-ND	IRFIZ48N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	--
IPA65R110CFDXKS A1-ND	IPA65R110CFDXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Power Dissipation (Max): 34.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	500+: $2.5826
IPA50R280CEXKSA 2-ND	IPA50R280CEXKSA 2	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Power Dissipation (Max): 30.4W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	290 Order	1+: $1.0017 10+: $0.8864 100+: $0.7004 500+: $0.5432 1000+: $0.4288
IPA70R750P7SXKS A1-ND	IPA70R750P7SXKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70A Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V Power Dissipation (Max): 21.2W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	390 Order	1+: $0.6678 10+: $0.5928 100+: $0.4686 500+: $0.3634 1000+: $0.2869
IPA80R900P7XKSA 1-ND	IPA80R900P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 110A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V Power Dissipation (Max): 26W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	153 Order	1+: $1.1214 10+: $0.9916 100+: $0.7838 500+: $0.6079 1000+: $0.4799
SIHA14N60E-E3-N D	SIHA14N60E-E3	Vishay Siliconix	View more Series: E Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V Power Dissipation (Max): 147W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	957 Order	1+: $1.7199 10+: $1.5542 100+: $1.2487 500+: $0.9712 1000+: $0.8047
IRFI9Z24N-ND	IRFI9Z24N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175 mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 29W (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
IRFIZ48NPBF-ND	IRFIZ48NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	2835 Order	--
IPAN60R650CEXKS A1-ND	IPAN60R650CEXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	953 Order	1+: $0.7749 10+: $0.6854 100+: $0.5419 500+: $0.4203 1000+: $0.3318
IRFI9Z34N-ND	IRFI9Z34N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power Dissipation (Max): 37W (Tc) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0

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