| Allicdata Part #: | IRFIZ48NPBF-ND |
| Manufacturer Part#: |
IRFIZ48NPBF |
| Price: | $ 1.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 40A TO220FP |
| More Detail: | N-Channel 55V 40A (Tc) 54W (Tc) Through Hole TO-22... |
| DataSheet: | IRFIZ48NPBF Datasheet/PDF |
| Quantity: | 2835 |
| 1 +: | $ 1.32000 |
| 10 +: | $ 1.28040 |
| 100 +: | $ 1.25400 |
| 1000 +: | $ 1.22760 |
| 10000 +: | $ 1.18800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220AB Full-Pak |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 54W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFIZ48NPBF mosfet is a very powerful and reliable type of FET (Field Effect Transistor) used for a multitude of purposes ranging from controlling electric motors to providing a reliable power solution in systems that are high voltage and/or high current. This transistor is a single type of FET and its application field involves extremely diverse applications, making it a very important component in the industry. This article will explore the application field and working principle of the IRFIZ48NPBF mosfet.
The IRFIZ48NPBF mosfet is designed with a low on-resistance and high breakdown voltages, making it suitable for applications such as motor control, protection circuits, and power supplies. The low on-resistance of the mosfet means that it can handle higher current-load circuits, allowing for a more efficient distribution of power in multiple devices. The transistor also has a low reverse leakage current, which helps to reduce the power consumption of a system, further increasing its efficiency.
The IRFIZ48NPBF mosfet is ideal for use in systems that require rugged reliability, making it a popular choice for military and aerospace applications, where a high level of reliability is required for proper operation. The transistor is specifically designed for maximum performance in high-voltage, high-current applications. It can also withstand up to -55 degrees Celsius, making it well suited for use in extreme climates. Furthermore, it is excellent for use in high-temperature environments, making it ideal for automotive and other industrial applications.
The IRFIZ48NPBF mosfet is designed to be used in any application requiring regulated, robust control of power, current, and logic. It is an ideal choice for high-power switching applications and can be used in all types of systems, including industrial, automotive, and consumer. It is also capable of providing high levels of current over a wide range of inductive and capacitive loads, making it suitable for a wide range of power applications.
The working principle of the IRFIZ48NPBF mosfet is relatively simple. The mosfet is capable of controlling the flow of electrons between gates, controllers, or drains through the use of electrical signals. The gate controls the flow of electrons, allowing for either on or off voltage control. The transistor is then able to switch between two different voltage levels, thus allowing for the efficient control and switching of exact amounts of current.
The IRFIZ48NPBF mosfet is a reliable FET that can be used in a wide range of applications, making it a popular choice for many power systems. It is designed with a low on-resistance and high breakdown voltages, as well as a low reverse leakage current. These features combined with its rugged reliability make it an ideal choice for high power switching applications, as well as consumer, industrial, and automotive applications. The mosfet is capable of providing high levels of current over a wide range of inductive and capacitive loads, making it suitable for a variety of power applications. The transistor operates on a simple working principle, consisting of the control of the flow of electrons between gates, controllers, or drains. The IRFIZ48NPBF mosfet is a powerful, reliable FET that is capable of providing a dependable power solution.
The specific data is subject to PDF, and the above content is for reference
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IRFIZ48NPBF Datasheet/PDF