Allicdata Part #: | IRFIZ48N-ND |
Manufacturer Part#: |
IRFIZ48N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 36A TO220FP |
More Detail: | N-Channel 55V 36A (Tc) 42W (Tc) Through Hole TO-22... |
DataSheet: | IRFIZ48N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFIZ48N is a single N-Channel Enhanced Low-noise Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is designed to minimise noise and reduce switching times, making it ideal for use in audio applications. The IRFIZ48N is a low-voltage, high-current MOSFET designed to drive loads up to 2A and perform in high-frequency switching systems. It is specifically designed to improve the performance of audio amplifiers, making it a great choice for any audio-related application.
The IRFIZ48N features an enhanced structure, consisting of an N-Channel MOSFET, with Vgs voltage increase up to 10V, a drain-source breakdown voltage of -30V and a maximum drain current of 2A. This MOSFET also features a low-capacitance output capacitance for improved performance at higher frequencies. It is highly immune to parasitic oscillations, allowing for smooth transitioning and decent performances in audio applications.
The IRFIZ48N offers a low on-resistance of up to 5.8ohm at a drain-source voltage of 10V. This makes it an ideal choice for high-frequency switching systems that require high switching speeds. The MOSFET also has a high maximum breakdown voltage. This allows it to handle high voltage spikes, making it suitable for applications that may require protection from potential overloads.
When used in audio applications, the IRFIZ48N is capable of providing an excellent signal-to-noise ratio. It has an input voltage noise density of 11nV/sqrtHz and a total harmonic distortion of 0.1%. This makes it capable of achieving accurate sound reproduction, making it a great choice for audio products.
In terms of application fields, the IRFIZ48N is suitable for a wide range of audio applications. These include audio power amplifiers, active loudspeakers and automotive audio systems. It is also suitable for Power Management applications such as DC-DC converters, current regulators and power inverters. The device can also be used in other switching systems, such as industrial automation, control and measurement systems, which require high-frequency switching and excellent signal noise performance.
The IRFIZ48N is a great option for a wide range of applications. With its robust design, high voltage and current handling capabilities, low on-resistance, excellent signal-to-noise ratio and high immunity to parasitic oscillations, it is capable of providing great performance in audio, power management and other high-frequency switching systems.
The specific data is subject to PDF, and the above content is for reference
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