IRLI3803

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220AB Full-Pak
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	63W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5000pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	6 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	76A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRLI3803 is a high current, low on-resistance single MOSFET with a maximum current rating of 30A and a maximum on-resistance of 80mΩ. It’s become the go-to option for applications that require the transfer of power or control of high currents. This article will explore the uses of the IRLI3803 and its working principle. The IRLI3803 is designed for applications that require high current transfer, such as in power supplies, DC–DC converters, DC–AC inverters, power management, motor control, and audio amplifiers. The MOSFET technology used in the IRLI3803 allows for an extremely low on-resistance, making it highly efficient in terms of power transfer. The IRLI3803 is also designed with a low drain-to-source capacitance of only 1nF, making it ideal for high frequency applications. When using an IRLI3803 in a circuit, it is important to consider the operating conditions of the part. The operating voltage range of the device is between 8V to 30V and its maximum drain current varies depending on the other parameters of the circuit and the physical package. The maximum power dissipation of the part is determined by the package size and is measured in watts. The IRLI3803 is available in both TO220 and D2PAK packages. When an IRLI3803 is used in an application, it is necessary to consider both the gate drive and the gate capacitance. The gate drive requirements for the IRLI3803 depend on the total gate capacitance, which is determined by the capacitance of the device itself and the capacitance of the gate drive trace. The IRLI3803 requires a minimum gate drive voltage of 5V and a maximum of 30V. The gate capacitance of the device should be kept as low as possible to prevent any unwanted switching. The IRLI3803 is a unipolar MOSFET and it works by electrically controlling the flow of current between the source and drain terminals. When the voltage applied to the gate terminal is low, the device is in its “off” state and the flow of current is blocked. When the voltage applied to the gate terminal is increased, it becomes “on” and the current flows freely between the source and the drain. The low on-resistance of the IRLI3803 allows for efficient power transfer and the ability to control high current loads. Overall, the IRLI3803 is an ideal device for applications that require the transfer of high power or the control of high currents. It features a low on-resistance, a low drain-to-source capacitance, and a wide operating voltage range. Care must be taken to ensure that the electrical parameters of the device are within its operating conditions, and the gate drive and gate capacitance should be taken into consideration when designing with an IRLI3803.

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