Allicdata Part #: | 497-15115-5-ND |
Manufacturer Part#: |
STF24N60DM2 |
Price: | $ 3.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 18A TO220FP |
More Detail: | N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF24N60DM2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 3.04290 |
50 +: | $ 2.44516 |
100 +: | $ 2.22787 |
500 +: | $ 1.80401 |
1000 +: | $ 1.52145 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1055pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | FDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF24N60DM2 is a type of field effect transistor (FET) designed specifically for use in high-power, high-performance applications. It is a single type N-channel MOSFET that offers both efficient operation and low power consumption. This FET can handle up to 24 volts in its drain-source configuration, making it the ideal choice for a variety of applications.
The applications of the STF24N60DM2 vary, but one of the most common uses is in high-power switching applications. This FET can be used to switch high-current devices on and off, as well as to provide a fast, low-impedance path for current flow. As such, it is often used in automotive, industrial, and power distribution applications.
This particular FET also has other useful features and capabilities. For starters, it has a low gate-source capacitance, making it suitable for switching high-frequency applications. Additionally, it can handle voltages up to 110 V, meaning it is also suitable for high-voltage applications. It also features high-temperature performance, allowing it to be used in extreme temperature environments.
In terms of its working principle, the STF24N60DM2 is based on a P-channel FET circuitry. It is a type of FET based on a three-terminal device that controls the flow of current through the channel between its source and drain contacts. When the gate is connected to the source of the FET, a positive voltage is applied to the channel, allowing electrons to pass through the channel and to turn on the device. Conversely, when the gate is connected to the drain, a negative voltage is applied to the channel, reducing the flow of electrons and turning off the device.
The STF24N60DM2 is ideal for a variety of applications, from automotive and industrial to power distribution. Its low gate-source capacitance, its high temperature performance, and its ability to handle up to 110 volts make it a great choice for high-power and high-performance applications. Furthermore, its P-channel FET circuitry ensures fast switching speeds, low power consumption, and reliable operation. All in all, the STF24N60DM2 is an excellent option for high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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