IRFI4510GPBF

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The IRFI4510GPBF is a Power MOSFET Single Transistor from International Rectifier with a max drain-source voltage of 100V and a maximum drain current of 27A. The device has an RDS(on) of 18.3mΩ and a continuous drain-source current of 27A. It has a P-channel and is manufactured using the advanced SIPMOS technology. This technology provides the device with high drain-source breakdown voltage, excellent RDS(ONS) and gate charge characteristics, and low gate-drain capacitance. This MOSFET is suitable for a wide range of applications, such as DC/DC converters, power supplies, motor drives, UPSs, power amplifiers, etc.

This device has a max drain-source voltage of 100V and a max drain current of 27A. The gate-source voltage (Vgs) of the device ranges from -4.5V to -20V.The total gate charge of the device is 43nC, and the maximum Power Dissipation is 150W. The device has an on-state resistance (R DS(on) ) of 18.3 mΩ. Its drain-source breakdown voltage (BVDSS) is 100V and its gate-threshold voltage (VGS(th)) is -2.2V.

The IRFI4510GPBF features the advanced SIPMOS Technology which has the following benefits:

• High drain-source breakdown voltage
• Excellent RDS(on) and gate charge characteristics
• Low gate-drain capacitance

The IRFI4510GPBF is suitable for a variety of applications such as :

• DC/DC converters
• Power supplies
• Motor drives
• UPSs
• Power amplifiers

The operating principle of the IRFI4510GPBF is simple and easy to understand. The device consists of two components – a gate and a drain. When a positive voltage (VGS) is applied to the gate, a depletion region is created between the source and the drain. This region acts as an insulating barrier and prevents current flow between the source and the drain. When the voltage is increased further, the depletion region decreases in size, allowing current to flow between the source and the drain.

In order to regulate the flow of current between the source and the drain, the device also features an internal charge pump circuit which adds a small and steady bias voltage to the gate. This prevents the drain-source voltage from rising too high and causing damage to the device. The device also features a slew rate control circuit which restricts the rate at which the gate current can rise and fall. The device also has a number of protection circuits which protect the device from over-voltage, over-temperature and under-voltage conditions.

The IRFI4510GPBF is a high performance single N-channel MOSFET which is suitable for a wide range of applications. With its high drain-source breakdown voltage, excellent RDS(ON) and gate charge characteristics, and low gate-drain capacitance, the device is the ideal choice for power management applications. In addition, the device features a slew rate control circuit and protection circuits which makes it a highly reliable device.

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