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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SA1020-YT6NSF( J-ND	2SA1020-Y,T6NSF (J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
RN1905FELF(CBTR -ND	RN1905FE,LF(CB	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0304 8000+: $0.0265 12000+: $0.0225 28000+: $0.0212 100000+: $0.0176
RN1604(TE85LF)T R-ND	RN1604(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
HN1C01FU-Y(T5LF TTR-ND	HN1C01FU-Y(T5L, F,T	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
2SB1457(T6CANOF M-ND	2SB1457(T6CANO, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
RN1309(TE85LF)T R-ND	RN1309(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: RN130*	1000 Order	1+: $0
RN1910FELF(CTTR -ND	RN1910FE,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	8000 Order	4000+: $0.0304 8000+: $0.0265 12000+: $0.0225 28000+: $0.0212 100000+: $0.0176
2SC4207-BL(TE85 LFTR-ND	2SC4207-BL(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	3000 Order	3000+: $0.0556
RN1117(T5LFT)TR -ND	RN1117(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
RN2402SLF(D-ND	RN2402S,LF(D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
2SA1315-YT6ASNF (J-ND	2SA1315-Y,T6ASN F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1680T6F(J-ND	2SA1680,T6F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC4935-YQ(J-ND	2SC4935-Y,Q(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SD2206(T6CANOF M-ND	2SD2206(T6CANO, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC4116-GRLFTR- ND	2SC4116-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: 2SC4116	3000 Order	3000+: $0.0202 6000+: $0.0183 15000+: $0.0159 30000+: $0.0143 75000+: $0.0127 150000+: $0.0106
HN2C01FU-GR(T5L F)TR-ND	HN2C01FU-GR(T5L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.032
RN1907LF(CTTR-N D	RN1907,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.032 6000+: $0.0278 15000+: $0.0236 30000+: $0.0222 75000+: $0.0208 150000+: $0.0185
RN1973(TE85LF)T R-ND	RN1973(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.0556
RN2705JE(TE85LF )TR-ND	RN2705JE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	1000 Order	1+: $0
2SA1162S-YLF(DT R-ND	2SA1162S-Y, LF( D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: 2SA1162	1000 Order	1+: $0
2SC2229-O(MITIF M)-ND	2SC2229-O(MITIF ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1869-Y(JKTQM )-ND	2SA1869-Y(JKT,Q ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SB1457(TE6FM)- ND	2SB1457(TE6,F,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
RN1610(TE85LF)T R-ND	RN1610(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
2SC4881(CANOFM) -ND	2SC4881(CANO,F, M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
RN2108(T5LFT)TR -ND	RN2108(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
HN1B04FU-YLFTR- ND	HN1B04FU-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	3000 Order	3000+: $0.0304 6000+: $0.0265 15000+: $0.0225 30000+: $0.0212 75000+: $0.0198 150000+: $0.0176
RN2701JE(TE85LF )TR-ND	RN2701JE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	1000 Order	1+: $0
2SA965-O(TE6FM) -ND	2SA965-O(TE6,F, M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	1000 Order	1+: $0
2SC2235-Y(MBSH1 FM-ND	2SC2235-Y(MBSH1 ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TC35678FSG-002- ND	TC35678FSG-002	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Type: TxRx + MCU RF Family/Standard: Bluetooth Protocol: Bluetooth v4.2 Modulation: GFSK Frequency: 2.4GHz Power - Output: 0dBm Sensitivity: -93dBm Memory Size: 256kB Flash, 384kB ROM, 192kB RAM Serial Interfaces: IC, SPI GPIO: 17 Voltage - Supply: 2 V ~ 3.6 V Current - Receiving: 3.3mA Current - Transmitting: 3.3mA Operating Temperature: -40C ~ 85C Package / Case: 60-VFQFN Exposed Pad	1000 Order	--
TC35678FXG-002( EL)TR-ND	TC35678FXG-002( EL)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Type: TxRx + MCU RF Family/Standard: Bluetooth Protocol: Bluetooth v4.2 Modulation: GFSK Frequency: 2.4GHz Power - Output: 0dBm Sensitivity: -94dBm Memory Size: 256kB Flash, 384kB ROM, 192kB RAM Serial Interfaces: IC, SPI GPIO: 17 Voltage - Supply: 2 V ~ 3.6 V Current - Receiving: 3.3mA Current - Transmitting: 3.3mA Operating Temperature: -40C ~ 85C Package / Case: 60-VFQFN Exposed Pad	1000 Order	2000+: $1.6339
TMP86FS49BUG(CJ Z)-ND	TMP86FS49BUG(C, JZ)	Toshiba Semiconductor and Storage	View more Series: TLCS-870/C Packaging: Tray Part Status: Active Core Processor: 870/C Core Size: 8-Bit Speed: 16MHz Connectivity: IC, SIO, UART/USART Peripherals: LED, PWM, WDT Number of I/O: 56 Program Memory Size: 60KB (60K x 8) Program Memory Type: FLASH RAM Size: 2K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10) Base Part Number: TMP86	1000 Order	1+: $0
TMPM362F10FGC-N D	TMPM362F10FG(C)	Toshiba Semiconductor and Storage	View more Series: TX03 Packaging: Tray Part Status: Not For New Designs Core Processor: ARM Cortex-M3 Core Size: 32-Bit Speed: 64MHz Connectivity: EBI/EMI, IC, Microwire, SIO, SPI, SSP, UART/USART Peripherals: DMA, WDT Number of I/O: 104 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 16x10b Oscillator Type: External Operating Temperature: -20C ~ 85C (TA) Package / Case: 144-FQFP Supplier Device Package: 144-LQFP (20x20) Base Part Number: TMPM362	1000 Order	200+: $5.1282
TMP91FY42FG(CJZ )-ND	TMP91FY42FG(C,J Z)	Toshiba Semiconductor and Storage	View more Series: TLCS-900/L1 Packaging: Tray Part Status: Obsolete Core Processor: 900/L1 Core Size: 16-Bit Speed: 27MHz Connectivity: EBI/EMI, IC, IrDA, UART/USART Peripherals: DMA, PWM, WDT Number of I/O: 81 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14) Base Part Number: TMP91	1000 Order	1+: $0
TMP86FS49BFG(ZH Z)-ND	TMP86FS49BFG(ZH Z)	Toshiba Semiconductor and Storage	View more Series: TLCS-870/C Packaging: Tray Part Status: Active Core Processor: 870/C Core Size: 8-Bit Speed: 16MHz Connectivity: IC, SIO, UART/USART Peripherals: LED, PWM, WDT Number of I/O: 56 Program Memory Size: 60KB (60K x 8) Program Memory Type: FLASH RAM Size: 2K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-BQFP Supplier Device Package: 64-QFP (14x14) Base Part Number: TMP86	1000 Order	1+: $0
TMP86FHDMG(KYZ) -ND	TMP86FHDMG(KYZ)	Toshiba Semiconductor and Storage	View more Series: TLCS-870/C Packaging: Tray Part Status: Obsolete Core Processor: 870/C Core Size: 8-Bit Speed: 16MHz Connectivity: IC, SEI, UART/USART Peripherals: PWM, WDT Number of I/O: 24 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH RAM Size: 512 x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 6x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 30-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 30-SSOP Base Part Number: TMP86	1000 Order	1+: $0
TMPM369FDFG-ND	TMPM369FDFG	Toshiba Semiconductor and Storage	View more Series: TX03 Packaging: Tray Part Status: Active Core Processor: ARM Cortex-M3 Core Size: 32-Bit Speed: 80MHz Connectivity: CANbus, EBI/EMI, Ethernet, IC, Microwire, SIO, SPI, SSP, UART/USART, USB Peripherals: DMA, POR, WDT Number of I/O: 102 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 16x12b, D/A 2x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 144-FQFP Supplier Device Package: 144-LQFP (20x20) Base Part Number: TMPM369	160 Order	--
TMP91FW27UG-ND	TMP91FW27UG	Toshiba Semiconductor and Storage	View more Series: TLCS-900/L1 Packaging: Tray Part Status: Obsolete Core Processor: 900/L1 Core Size: 16-Bit Speed: 27MHz Connectivity: EBI/EMI, IC, IrDA, UART/USART Peripherals: DMA, WDT Number of I/O: 53 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 12K x 8 Voltage - Supply (Vcc/Vdd): 2.2 V ~ 3.6 V Data Converters: A/D 4x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10) Base Part Number: TMP91	1000 Order	--
TMPM365FYXBG(HJ )-ND	TMPM365FYXBG(HJ )	Toshiba Semiconductor and Storage	View more Series: TX03 Packaging: Tray Part Status: Active Core Processor: ARM Cortex-M3 Core Size: 32-Bit Speed: 48MHz Connectivity: IC, SIO, SPI, UART/USART, USB Peripherals: DMA, WDT Number of I/O: 73 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH RAM Size: 24K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 12x12b Oscillator Type: External Operating Temperature: -40C ~ 85C (TA) Package / Case: 105-LFBGA Supplier Device Package: 105-LFBGA (99)	840 Order	1+: $3.9375 10+: $3.5438 25+: $3.2289 168+: $2.9138 336+: $2.6775 504+: $2.4413 1008+: $2.1263 2520+: $2.0475

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