Allicdata Part #: | RN1905FELF(CBTR-ND |
Manufacturer Part#: |
RN1905FE,LF(CB |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1905FE,LF(CB Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.03043 |
8000 +: | $ 0.02646 |
12000 +: | $ 0.02249 |
28000 +: | $ 0.02117 |
100000 +: | $ 0.01764 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN1905FE,LF(CB is an array pre-biased Transistor. The type of transistor is Bipolar (BJT), meaning it has two semiconductor base–emitter junctions. It is used primarily in cellular phone applications, such as Bluetooth and Wi-Fi, as well as in many other electronic devices. The transistors are packaged in a 20-pin QFN (Quad Flat NO-Lead) package. It is a 3-stage process for manufacturing, making it ideal for use in complex circuits. This article will focus on the application field and working principle of RN1905FE,LF(CBs.
The RN1905FE,LF(CB can be used in many different types of applications. It is most commonly used in circuits that require a large current to pass through, such as high power amplifiers or switching circuits. It can also be used in power supply design, where the voltage drop from the source to the load must be controlled accurately. This type of transistor also has high switching speeds, making it ideal for many types of noise mitigation applications. The device has a very low input bias current, which is why it is often used in switching circuits. Additionally, the device also has a low voltage drop, making it well suited for circuits with low input voltages.
The working principle of a RN1905FE,LF(CB consists of three stages: the base stage, the collector stage, and the emitter stage. At the base stage, the transistor acts like a switch. When the base is forward-biased, current can flow through the device, while when it is reverse-biased, current cannot flow through the device. At the collector stage, current can flow through the device again, and at the emitter stage, current will flow through the device in the opposite direction. The device can be used as an amplifier, as well as a switching circuit, depending on the mode it is used in.
In conclusion, the RN1905FE,LF(CB is an array pre-biased Transistor with an array of three stages. It is used primarily in complex circuits for cellular phone applications, as well as other electronic devices. It has a very low voltage drop, a low input bias current, and high switching speeds, making it ideal for noise mitigation applications. The device is also able to operate as an amplifier and a switching circuit, depending on the mode it is used in.
The specific data is subject to PDF, and the above content is for reference
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