RN1910FE,LF(CT Allicdata Electronics
Allicdata Part #:

RN1910FELF(CTTR-ND

Manufacturer Part#:

RN1910FE,LF(CT

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1910FE,LF(CT datasheetRN1910FE,LF(CT Datasheet/PDF
Quantity: 8000
4000 +: $ 0.03043
8000 +: $ 0.02646
12000 +: $ 0.02249
28000 +: $ 0.02117
100000 +: $ 0.01764
Stock 8000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN1910FE,LF, otherwise known as the pre-biased array of transistors, is used for various types of current transfer applications. It has a wide range of applications ranging from automotive lighting, military and aerospace navigation systems, consumer electronics, and satellite communications. This type of transistor array is capable of handling a large amount of current, often over 100A.

This type of transistor array works by creating a uniform current transfer, while avoiding overloads, allowing it to handle large current without any issue. It is composed of two individual transistors, each of which has its own current-sensing circuit. The current-sensing circuits are connected to an external control logic, which provides the required current level for operation, according to the system specifications. The transistors receive signals from and provide feedback to the control logic, allowing it to maintain a steady current level.

The pre-biased array of transistors has several advantages over other types of transistors. For starters, it is capable of transferring large amounts of current extremely efficiently. It can also operate at high frequencies, allowing signals to be processed faster and more accurately. Additionally, this type of transistor array is typically more reliable than other transistor types, due to the advanced design of its current-sensing circuits.

This type of transistor array is also well-suited for use in harsh environments. It is resistant to high temperatures, so it can be used in areas that experience intense heating. It is also resistant to shock and vibration, meaning it can survive in hostile environments without incurring damage or malfunctioning. Furthermore, it is resistant to moisture and chemical exposure, ensuring that it will last long in areas where these elements are present.

The RN1910FE,LF pre-biased array of transistors is ideal for applications requiring high-current capabilities, high frequency responses, high reliability and durability, and good resistance to hostile environments. Its advantages make it an ideal choice for areas in the automotive, military, aerospace navigation, consumer electronics, and satellite communications industries.

The specific data is subject to PDF, and the above content is for reference

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