IXGN320N60A3 Allicdata Electronics
Allicdata Part #:

IXGN320N60A3-ND

Manufacturer Part#:

IXGN320N60A3

Price: $ 19.47
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V SOT-227B
More Detail: IGBT Module PT Single 600V 320A 735W Chassis Mount...
DataSheet: IXGN320N60A3 datasheetIXGN320N60A3 Datasheet/PDF
Quantity: 103
1 +: $ 17.70300
10 +: $ 16.37560
25 +: $ 15.04770
100 +: $ 13.98540
250 +: $ 12.83460
500 +: $ 12.21510
Stock 103Can Ship Immediately
$ 19.47
Specifications
Series: GenX3™
Part Status: Active
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 320A
Power - Max: 735W
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A
Current - Collector Cutoff (Max): 150µA
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Description

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The IXGN320N60A3 is an IGBT module designed for the purpose of power switching applications. It has a maximum current rating of up to 320A and a maximum voltage rating of up to 600V. The IXGN320N60A3 uses low saturation voltage and a low switching loss, making it suitable for use in a wide range of power systems for applications such as induction heating, motor control, power factor correction and power supplies.

The IXGN320N60A3 employs a new generation of IGBTs in a compact design, resulting in reduced internal losses and longer life. It includes overcurrent, overvoltage and over-temperature protection, and a snubber circuit with the parameter adjusted by the user. It also has the optional feature of an undervoltage protection circuit with adjustable parameters. All of these features make the IXGN320N60A3 ideal for power switch applications.

The working principle of the IXGN320N60A3 power module is based on the principle of a transistor, which is a semiconductor device consisting of either a p-n junction or a metal-oxide-semiconductor (MOS). The IXGN320N60A3 is a type of transistor that combines both n-type and p-type materials to form a more complex component. It is composed of two n-type and one p-type processing substrate material. As voltage is applied to the processor substrate, electrons and holes begin to flow, allowing current to flow through the device. The current is then controlled by the gate over the n-type materials.

The IXGN320N60A3 employs a number of new technologies such as active clamping, temperature compensation, turn-on ramp and clamping. Active clamping helps protect the module from potentially damaging electrical conditions while controlling the switching transition. Temperature compensation helps improve the stability of the device and ensures a longer lifetime. The turn-on ramp helps reduce losses when the IGBT is switched on, while the clamping helps control the energy dissipated as the IGBT turns off.

The IXGN320N60A3 is suitable for use in a wide range of applications such as power switching circuits, power supplies, medium-power inverters, motor control, uninterruptible power supply, induction heating, and even electric vehicle charging stations. It can also be used in power conversion and rectification, pulse transformers, medium and high-power lighting, and motorized appliances.

In short, the IXGN320N60A3 module is suitable for many power switching applications, thanks to its low saturation voltage, low switching loss, over-current, over-voltage, and over-temperature protection, and the user adjustable snubber and optional undervoltage protection. It is ideal for a number of applications such as induction heating, motor control, power factor correction, power supplies and inverters, rectification, and electric vehicle charging stations.

The specific data is subject to PDF, and the above content is for reference

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