| Allicdata Part #: | IXGN200N170-ND |
| Manufacturer Part#: |
IXGN200N170 |
| Price: | $ 35.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT |
| More Detail: | IGBT 1700V 280A 1250W Chassis Mount SOT-227B |
| DataSheet: |  IXGN200N170 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 31.92840 |
Specifications
| Input Type: | Standard |
| Supplier Device Package: | SOT-227B |
| Package / Case: | SOT-227-4, miniBLOC |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 133ns |
| Test Condition: | 850V, 100A, 1 Ohm, 15V |
| Td (on/off) @ 25°C: | 37ns/320ns |
| Gate Charge: | 540nC |
| Series: | -- |
| Switching Energy: | 28mJ (on), 30mJ (off) |
| Power - Max: | 1250W |
| Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 100A |
| Current - Collector Pulsed (Icm): | 1050A |
| Current - Collector (Ic) (Max): | 280A |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| IGBT Type: | -- |
| Part Status: | Active |
Description
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The IXGN200N170 is an insulated gate bipolar transistor specifically designed for a variety of high-power and high-frequency applications. It offers a combination of high power efficiency, fast switching speeds, and high reliability and is available in standard and straight gate copack packages.The IXGN200N170 is a device used for high-current and high-frequency operations. It combines the advantages of a conventional bipolar junction transistor (BJT) and a power MOSFET, and can achieve low on-state resistance and high switching speed. Thus, allowing for higher current and higher frequency applications with fewer components. The IXGN200N170 is a single-package insulated gate bipolar transistor that uses an insulated gate to control the bimorph from on-state to off-state. It has an N-channel enhancement-mode MOSFET as the base, which is protected by an isolating gate oxide layer between the base-emitter and the collector. This isolating gate oxide layer dramatically reduces the on-resistance of the transistor, making it suitable for high-current and high-frequency applications.The working principle of the IXGN200N170 involves the use of an insulated gate to control the bimorph. When the MOSFET base is driven high, the transistor turns on and current flows through the collector-emitter. When the base voltage is driven low, the transistor turns off and current flow is stopped. The IXGN200N170 is mainly used in high-power applications, such as motor control, switching power supplies, and other high-frequency applications. It has a wide range of uses, from consumer appliances to industrial applications. For example, it can be used for power conversion and for controlling the speed and direction of motors. It is also ideal for high-efficiency and low-EMI/RFI applications.In summary, the IXGN200N170 is an insulated gate bipolar transistor specifically designed for high-current and high-frequency applications. It offers a combination of low on-state resistance and fast switching speed, making it ideal for a variety of applications ranging from consumer appliances to industrial applications.
The specific data is subject to PDF, and the above content is for reference
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