IXGN82N120C3H1

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The IXGN82N120C3H1 is an Insulated Gate Bipolar Transistor (IGBT) module designed to provide reliable performance in a variety of applications and environments. It is designed with a trenched gate technology and has low onboard capacitance, allowing for fast switching performance and low losses. This IGBT module is suitable for a variety of applications including motor control, soft-switching, and DC/DC conversion. It has a rugged body structure and is able to withstand operation in a variety of harsh environments. Additionally, it has a good surge current capability and a wide VCE range, making it suitable for use in a variety of power electronic applications.

Application Field

The IXGN82N120C3H1 is a reliable and versatile IGBT module that is suitable for use in a variety of applications. It is typically used for motor control applications, such as speed control and precise torque control. Additionally, it is often used for soft-switching applications, such as inverter drives, AC inverters, AC/DC converters, and AC/DC uninterruptible power systems. Furthermore, this IGBT module is also suitable for use in battery charging systems and power supplies. Its rugged body structure and wide VCE range make it suitable for use in a variety of harsh environments, including those with high temperatures and humidity.

Working Principle

The IXGN82N120C3H1 is an IGBT module that utilizes a trenched gate technology. This technology utilizes trenches etched through the silicon of the chip. When the gate voltage is applied, electric fields are generated along these trenches, providing a greater electric field for the same voltage than for a non-trenched device. This technology can provide greater conduction and blocking performance, achieving higher switching frequencies, better thermal performance and lower losses.

When an electrical current flows in the IGBT module, the electric field in the trenches creates an attractive force which acts on the charge carriers and traps them near the surface of the chip. This allows the current to flow without going through the entire thickness of the silicon, thus allowing the chip to switch very quickly. This fast switching capability makes the IXGN82N120C3H1 suitable for use in high-power applications.

The IXGN82N120C3H1 also has a low onboard capacitance. Capacitance is created when charges are stored on the gate dielectric layer and is responsible for energy losses in switching mode power supplies. By having a low capacitance, the IXGN82N120C3H1 is able to switch faster and have lower losses, making it suitable for use in high-power applications.

The IXGN82N120C3H1 is a reliable and versatile IGBT module that is suitable for a variety of applications and environments. Its trenched gate technology and low onboard capacitance provide fast switching performance and low losses, making it suitable for high-power applications. Its rugged body structure and wide VCE range make it suitable for use in harsh environments. Additionally, its good surge current capability makes it suitable for use in power electronic applications.

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