Allicdata Part #: | IXGN82N120B3H1-ND |
Manufacturer Part#: |
IXGN82N120B3H1 |
Price: | $ 25.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 145A SOT-227 |
More Detail: | IGBT Module PT Single 1200V 145A 595W Chassis Moun... |
DataSheet: | IXGN82N120B3H1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 23.25200 |
Specifications
Series: | GenX3™ |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 145A |
Power - Max: | 595W |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 82A |
Current - Collector Cutoff (Max): | 50µA |
Input Capacitance (Cies) @ Vce: | 7.9nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Description
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The IXGN82N120B3H1 is a module type IGBT, produced by Infineon Technologies AG. It is a module type transistor, with a nominal current rating of 1200A and a nominal voltage rating of 1200V. It has a current gain of 2.2kA and a nominal power rating of 600W.This module type IGBT has a wide range of application fields, including heavy-duty power supplies, switch-mode power supplies, motor drives, power converters, UPS systems, and general switching applications. It is also suitable for use in both industrial and consumer products.The IXGN82N120B3H1 has a symmetrical structure. It is composed of two IGBTs, one p-type half-bridge, and one n-type half-bridge. Each half-bridge has four bipolar junction transistors in a 25° phase angle compensator configuration. Between the two IGBTs, there is a snubber network.The IXGN82N120B3H1 has a low junction capacitance, which helps it achieve faster switching speeds and higher levels of efficiency. It also has a low on-state voltage drop.The IXGN82N120B3H1 works on a principle of voltage regulation. The current gain is set according to an external charge: the voltage drop across the device is proportional to the current that is flowing through it. This ensures that the output voltage is kept constant and stable, regardless of the load. A trigger circuit is used to turn on the device.The IXGN82N120B3H1 is a robust and reliable device, making it suitable for a wide range of applications. It is resistant to overload damage and can withstand temperatures up to 150°C. It has a lower cost than other module type IGBTs, making it an attractive option for many applications.In conclusion, the IXGN82N120B3H1 is a module type IGBT, with a nominal current rating of 1200A, a nominal voltage rating of 1200V, and a nominal power rating of 600W. Its wide range of applications include heavy-duty power supplies, switch-mode power supplies, motor drives, power converters, UPS systems, and general switching applications. It works on a principle of voltage regulation and has a low junction capacitance, allowing it to achieve faster switching speeds and higher levels of efficiency. In addition, it is robust and reliable, with a low cost, making it an attractive option for many applications.The specific data is subject to PDF, and the above content is for reference
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