IXGN60N60C2 Allicdata Electronics
Allicdata Part #:

IXGN60N60C2-ND

Manufacturer Part#:

IXGN60N60C2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A SOT-227B
More Detail: IGBT Module PT Single 600V 75A 480W Chassis Mount ...
DataSheet: IXGN60N60C2 datasheetIXGN60N60C2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 650µA
Base Part Number: IXG*60N60
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 4.75nF @ 25V
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: 480W
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
IGBT Type: PT
Part Status: Obsolete
Description

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IXGN60N60C2 is a type of IGBT module, designed for use in a wide range of application fields and working principles. It is a 1200V, 600A and offers a fast switching speed with low switching losses, allowing higher power efficiency. This module also offers a lower threshold voltage than other IGBTs, ensuring high operating power and allowing more flexibility when selecting operating parameters.

This type of IGBT module is specially designed and produced for use in a variety of power applications. It is typically deployed in application fields like traction converters, servo drives and adjustable speed drives, all of which need fast switching times, low losses and precise control. Furthermore, they are often used in high efficiency power inverters, switch-mode power supplies, electric vehicle power systems, and renewable energy systems.

The working principle of the IXGN60N60C2 module is based on the construction and operation of a ‘field effect transistor’ (FET). It has a source, gate and drain, which allows for bi-directional current flow through the device. The source of the device is connected to one voltage rail, the drain is connected to the other voltage rail, and the gate controls how much current is allowed to flow by modifying the electric field between the source and the drain.

When a positive voltage is applied to the gate, the electric field between the source and the drain is strong enough to cause electrons to flow in the opposite direction, allowing current to flow to the load. Conversely, when no voltage is applied to the gate, the electric field between the source and the drain is weak and electrons cannot flow, thus preventing current from flowing.

The IXGN60N60C2 module uses IGBT technology to increase the current handling capabilities of the device and the switching speed, as well as other features. This type of module is made up of an IGBT chip, copper heat sink and fast-on connection terminals. It provides an output of 600A continuous, a short circuit current rating of 2000A, and a forward blocking voltage of up to 1200V.

In addition, the IXGN60N60C2 module boasts low on-state losses, fast switching speed, high frequency operation and low gate charge. All these features come together to enable high power efficiency and precise power regulation in applications. An optimized and robust construction also ensures a high degree of reliability for all types of applications.

In conclusion, IXGN60N60C2 IGBT modules are designed for a wide range of application fields and working principles. Their fast switching speed, low power losses and precise power regulation constitute the strengths of this type of module. This type of IGBT module is especially suited for applications in power inverters, switch-mode power supplies, traction converters, servo drives and adjustable speed drives.

The specific data is subject to PDF, and the above content is for reference

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