IXGN80N60A2D1 Allicdata Electronics
Allicdata Part #:

IXGN80N60A2D1-ND

Manufacturer Part#:

IXGN80N60A2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 160A FRD SOT-227B
More Detail: IGBT Module Single 600V 160A 625W Chassis Mount S...
DataSheet: IXGN80N60A2D1 datasheetIXGN80N60A2D1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Power - Max: 625W
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
Current - Collector Cutoff (Max): 650µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Description

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The IXGN80N60A2D1 is an Insulated-gate bipolar transistors (IGBT) module, and is one of the various types of field effect transistors available to consumers. This device is specifically designed to be used as an on/off switch, as an efficient device for controlling large amounts of current. IGBTs are often used in the design of power electronics due to their capability to work at high switching frequencies, their good switching performance and their greater immunity to the electromagnetic interference (EMI). It is also used in applications such as power supplies, DC-DC converters, motor drives and uninterruptible power supplies (UPS).

The IXGN80N60A2D1 utilizes the metal-oxide semiconductor field-effect transistor (MOSFET) version of the IGBT transistors. The MOSFET version of the IGBTs has the ability to work at higher breakdown voltages and has faster switching speeds than the bipolar version. This makes the IXGN80N60A2D1 an attractive option for implementing high-power applications. It also has an extremely low on-state resistance, which means that it consumes less power and is more energy efficient than other types of devices.

The working principle of the IXGN80N60A2D1 is relatively simple. When the voltage in the circuit is low, the transistor is in its off-state and no current is allowed to flow through it. When the voltage is increased to a certain threshold level, the transistor switches to its on-state and current is allowed to flow through it. The on-state resistance of the transistor determines how much current can flow through it.

The IXGN80N60A2D1 is most commonly used in applications that require high switching speeds and low power consumption. These include switch-mode power supplies, DC-DC converters, motor drives and uninterruptible power supplies (UPS). They can also be used in medical electronics and robotics, as well as in industrial applications such as welding machines and power transmission systems. Additionally, due to their low EMI rate, they are often employed in RF applications such as cellular phones and other electronic devices.

The IXGN80N60A2D1 is a reliable and cost-effective IGBT module for those who want a device for high power and high frequency applications. Its low profile and high switching speed make it an ideal choice for applications that require a fast response time and need to maintain a high level of efficiency. Furthermore, its great versatility makes it suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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