Allicdata Part #: | IXGN200N60B-ND |
Manufacturer Part#: |
IXGN200N60B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT FAST 600V 200A SOT-227B |
More Detail: | IGBT Module PT Single 600V 200A 600W Chassis Mount... |
DataSheet: | IXGN200N60B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 200µA |
Base Part Number: | IXG*200N60 |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 11nF @ 25V |
Series: | HiPerFAST™ |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 120A |
Power - Max: | 600W |
Current - Collector (Ic) (Max): | 200A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Configuration: | Single |
IGBT Type: | PT |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXGN200N60B is a module that includes a pair of insulated-gate bipolar transistors (IGBTs), a rectifier diode, and two bipolar gate control terminals. It is primarily used for power rectifiers, motor control and UPS. Compared to other transistors, IGBTs are well-suited for high-frequency applications such as motor drives, and other applications that require high-power and high-current. IXGN200N60B is designed to provide significant cost savings in applications that require lower temperatures and improved operation.
The IXGN200N60B module contains two IGBTs in a single package. Each IGBT has an N-type and a P-type two-layer substrate. The two-layer substrate allows for higher current and switching speeds and better control of thermal spreading. The IGBTs are rated at 600 volts with a maximum current of 200A. The module also includes a fast-recovery rectifier diode with a reverse voltage rating of 600V, and two bipolar gate control terminals for each IGBT. The module also includes a temperature sensor for improved operation.
The working principle of the IXGN200N60B module is based on the interaction between the two IGBTs in the package. When the gate control terminals of the module are connected to a DC power source, the current flows through the IGBTs and creates an electrical field that controls the current flow in the module. This electrical field is then used to control the switching on and off of the transistor. The rectifier diode is configured to allow current to flow in one direction only, while the IGBTs are configured to switch the current on or off depending on the electrical field applied to their gates.
The IXGN200N60B module can be used in a variety of applications including motor control, UPS, power rectifiers, and more. As the module is designed to work at high frequencies, it is ideal for applications such as motor drives, switches, and other high-frequency applications. The module is also suitable for applications that require lower temperatures and improved operational control. The IXGN200N60B module offers a cost-effective solution for applications which require high current and power capabilities.
In conclusion, the IXGN200N60B module is a highly efficient and affordable solution for applications that require high-current and power capabilities. The module’s two IGBTs, rectifier diode and gate control terminals are designed to ensure reliable operation at high speeds. Additionally, the module’s temperature sensor allows for improved operation in low-temperature applications. This makes the IXGN200N60B module an ideal solution for a range of applications, such as motor control, UPS, power rectifiers, and more.
The specific data is subject to PDF, and the above content is for reference
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