IXGN100N160A

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The IXGN100N160A is an IGBT module manufactured by IXYS Corporation. It is specifically designed to offer increased surge current capability in demanding high voltage applications. This module is suitable for high speed switching, soft switching applications and variable frequency control applications.

The IXGN100N160A module is composed of two IGBT components in a common negative gate voltage configuration. Each IGBT transistor utilizes two dual isolated gate structures with separate gate terminals for each. This enables the gate terminals of one of the IGBT transistors to be controlled independently from the gate terminals of the other.

The IXGN100N160A IGBT module is rated for up to 1.6 kV single-phase operation and up to 1600 A continuous current (with a peak to peak current of up to 4800 A). It has a low forward voltage drop of around 1.30 V and can switch up to 100 kHz.

The IXGN100N160A module offers benefits such as improved surge current capability, low voltage drop, fast switching and low junction temperature performance. These features make it suitable for applications where high current and fast switching are required.

The IXGN100N160A IGBT module can be used in a variety of applications, such as:

• High-power inverters
• Welding power supplies
• Ultrasonic heating
• Motor drives and controls
• AC harmonic correction and motor soft-starting

The working principle of the IXGN100N160A IGBT module is based on the principle of electron flow modulation. This allows the device to modulate the flow of electrons from the collector to the emitter of the device. The electronic flow is controlled by a gate voltage, which is applied to the gate terminal. When the gate voltage is applied, a channel is created between the emitter and the collector of the device, allowing electrons to flow freely. As the gate voltage is increased, the width of the channel is increased, and the electron flow increases, resulting in increased output current.

When the gate voltage is decreased, the width of the channel decreases, and the electron flow decreases, resulting in decreased output current. The IXGN100N160A IGBT module is designed to operate at higher voltages, allowing for greater current flow and higher switching frequencies.

The IXGN100N160A IGBT module is a reliable, high-performance device that offers improved surge current capability, low voltage drop and fast switching. This makes it suitable for a wide range of applications, particularly those that require high-power switching and high-speed control.

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