IXGN72N60C3H1 Allicdata Electronics
Allicdata Part #:

IXGN72N60C3H1-ND

Manufacturer Part#:

IXGN72N60C3H1

Price: $ 15.96
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 78A 600V SOT-227B
More Detail: IGBT Module PT Single 600V 78A 360W Chassis Mount ...
DataSheet: IXGN72N60C3H1 datasheetIXGN72N60C3H1 Datasheet/PDF
Quantity: 1000
10 +: $ 14.51080
Stock 1000Can Ship Immediately
$ 15.96
Specifications
Current - Collector Cutoff (Max): 250µA
Base Part Number: IXG*72N60
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 4.78nF @ 25V
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: 360W
Current - Collector (Ic) (Max): 78A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
IGBT Type: PT
Part Status: Active
Description

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IXGN72N60C3H1 Application Field and Working Principle

The IXGN72N60C3H1 is part of the series of IGBT modules developed by Infineon Technologies for use in industrial applications. The series is designed for high-frequency and low-loss operation in medium and high-voltage applications. Its low-power consumption and high-efficiency makes it suitable for a range of applications such as computers, UPS systems, and motor drives. In this article, we will look at the application field and working principle of the IXGN72N60C3H1.

Application Field

The IXGN72N60C3H1 is suitable for industrial applications such as computers, UPS systems, and motor drives that require reliable, high-performance operation. Its low-power consumption and high current capability make it suitable for low-power digital systems where energy saving and long-term reliable operation is essential. It can also be used for inverter motor control in industrial applications, motor drives, and high-power inverters in renewable energy applications.

Additionally, its high-frequency and low-loss operation makes it suitable for high-start-up, low-loss motion control applications, including high-current and high-resolution pulse-width modulation (PWM) applications. Its large current capacity makes it ideal for large drives and motors, such as those used in commercial and industrial equipment.

Working Principle

The IXGN72N60C3H1 is an Insulated Gate Bipolar Transistor (IGBT) module. It is composed of a power semiconductor element and two electrical gates. IGBTs are made of two semiconductor materials, one type being an n-type, and the other a p-type. When an electrical gate is applied to an n-type material, it becomes electrically conductive. This phenomenon is called the electron beam effect. By applying an electrical gate to a p-type material, it becomes electrically conductive. This is called the hole effect. Both the n-type and p-type materials are combined in the IGBT module, allowing it to switch between conducting electric current and non-conducting.

The IXGN72N60C3H1 operates in three modes – the conduction mode, the inhibit mode, and the off mode. When the electrical gate is applied to the n-type material, current flows, and the IGBT is in the conduction mode. When the electrical gate voltage is reduced to zero, the material blocking the electric current becomes conductive and the IGBT is in the inhibit mode. The off mode is when the electric current flow is stopped and the voltage blocking the material is set to zero.

Conclusion

The IXGN72N60C3H1 is an IGBT module with low power consumption and high current capacity. Its application field includes computers, UPS systems, inverter motor control, motor drive, and high resolution PWM control. Its working principle involves controlling the electron beam effect and hole effect in the IGBT module, allowing it to switch between conduction, inhibition, and off modes. Its low-power consumption and high efficiency make it a suitable choice for a range of industrial applications.

The specific data is subject to PDF, and the above content is for reference

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