IXGN80N60A2 Allicdata Electronics
Allicdata Part #:

IXGN80N60A2-ND

Manufacturer Part#:

IXGN80N60A2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 160A SOT-227B
More Detail: IGBT Module Single 600V 160A 625W Chassis Mount S...
DataSheet: IXGN80N60A2 datasheetIXGN80N60A2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Power - Max: 625W
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
Current - Collector Cutoff (Max): 25µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Description

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IXGN80N60A2 is a module of Insulated Gate Bipolar Transistor (IGBT). It has a wide range of applications, and its working principle is quite interesting.

Application Field

This module has many applications, including air conditioning, motor control, energy conversion, and energy storage. In air conditioning, it is used to control the flow of air and adjust the temperature, which helps in creating a more comfortable environment. In motor control, it helps regulate the current flow and power output to the motors, ultimately providing better control and precision. In energy conversion, it helps in converting electrical energy into mechanical, acoustic, or optical energy. In energy storage, it helps store electrical energy and ensure a steady output.

Working Principle

The IXGN80N60A2 module operates with a simple principle. It relies on a Gate-Emitter voltage to control the turn-on and turn-off of the transistor. This voltage is applied on the Gate terminal and when the voltage is below a certain threshold, the transistor is off and when the voltage is above the threshold, the transistor is on. The on-state is governed by the Gate current, and at low Gate current, the transistor can operate at a higher frequency and at a lower current, the transistor can operate at a lower frequency. The IXGN80N60A2 also features a Turn-Off Anti-Parallel Fast Recovery Diode to ensure that the voltages generated during the turn-off phase are minimized.

Conclusion

IXGN80N60A2 is a reliable module of IGBT which is used in various applications. It utilizes a simple Gate-Emitter voltage to regulate turn-on and turn-off and also features a fast recovery diode to reduce the voltage generated during the turn-off phase. With its wide range of applications and working principle, this module is a great addition to any electronic device.

The specific data is subject to PDF, and the above content is for reference

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