Allicdata Part #: | IXGN100N120-ND |
Manufacturer Part#: |
IXGN100N120 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 160A 1200V SOT-227B |
More Detail: | IGBT Module Single 1200V 160A Chassis Mount SOT-... |
DataSheet: | IXGN100N120 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 160A |
Vce(on) (Max) @ Vge, Ic: | -- |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Description
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The IXGN100N120 transistor is an insulated gate bipolar transistor (IGBT) module with a maximum average gate current of 100A and a maximum gate voltage of 20V. It is one of several IGBT modules manufactured by Renesas Electronics. The IXGN100N120 module has a wide range of uses, such as in machine tools, AC servo motors, printing machines, and other high power industrial applications.The IXGN100N120 IGBT module features an integrated antiparallel diode, with a maximum reverse voltage of 1200V, and a low parasitic capacitance between Drain and Gate. The module also has an integrated Gate driver circuit, which allows for a fast switch-on time of 5us. This module is capable of operating temperatures up to 150°C and can handle repetitive peak reverse voltages of up to 1200V.The IXGN100N120 transistor is based on the principle of the insulated gate bipolar transistor. This principle is used when switching high power, since this type of transistor is able to handle much higher voltages and currents than a conventional MOSFET. The transistor uses a thin insulator layer between the Gate and Drain structures which isolates the two structures and prevents them from arcing or shorting out.The principle of operation of the IXGN100N120 module is fairly simple. When the Gate of the transistor is turned on, the voltage across the Gate to Drain increases, which causes the insulator layer to become thin, allowing electrons to flow through the device. This flow of electrons, in turn, causes the voltage across the Drain to Gate to decrease, while the voltage across the Gate to Source increases. This causes a current to flow through the device, allowing it to switch high power efficiently.The IXGN100N120 IGBT module is suitable for a wide range of applications, such as motor control, AC/DC power switching, agricultural equipment, industrial applications, and more. It is also suitable for high-frequency applications as its soft switch-on feature allows for fast and efficient switching of high-power loads. This transistor module is a cost-effective solution for high-power switching needs, making it popular among industrial and consumer electronics applications.The specific data is subject to PDF, and the above content is for reference
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