IXGN50N120C3H1 Allicdata Electronics
Allicdata Part #:

IXGN50N120C3H1-ND

Manufacturer Part#:

IXGN50N120C3H1

Price: $ 19.69
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 95A SOT-227
More Detail: IGBT Module PT Single 1200V 95A 460W Chassis Mount...
DataSheet: IXGN50N120C3H1 datasheetIXGN50N120C3H1 Datasheet/PDF
Quantity: 1000
10 +: $ 17.90400
Stock 1000Can Ship Immediately
$ 19.69
Specifications
Series: GenX3™
Part Status: Active
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 95A
Power - Max: 460W
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Description

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IXGN50N120C3H1 is a module IGBT from Infineon Technologies. It is designed for use in high power equipment, such as AC motor drives, uninterruptible power supplies (UPS), photovoltaic inverters and more. This module offers very low “on” resistance when switching high currents, and can do so safely with the inherent short-circuit protection provided. It also features temperature monitoring and external infrared protection, which makes it an ideal choice for medium and high power applications.

Application Fields

IXGN50N120C3H1 is a suitable module for use in a variety of medium and high power applications. These include solar farm inverters, railway traction systems and induction heating or welding machines. Its ability to effectively and safely handle currents up to 2000A, as well as its very low “on” resistance make it a good choice for these types of applications.

Working Principle

An IGBT module is a semiconductor device that uses both the electrical and thermal effects of a voltage to switch between different states. The IXGN50N120C3H1 module is designed for use in a high power application, where the required voltage is high enough to overcome the internal “on” resistance, allowing current to flow. As the current passes through the module, it also generates heat, which is dissipated safely due to the module’s design.

The module features a p-channel MOSFET and an n-channel IGBT, both of which are connected in series between the source terminal and the drain terminal. This allows the IGBT to switch between low-resistance and high-resistance states quickly and safely. The module also features a temperature sensor, which continuously monitors and regulates the temperature, ensuring that the module does not overheat and damage surrounding components.

IXGN50N120C3H1 is an excellent choice for medium and high power applications such as AC motor drives, solar farm inverters and railway traction systems. Its ability to effectively and safely switch between states, as well as its very low “on” resistance makes it a great choice for these types of applications. The module also features temperature monitoring and external infrared protection, ensuring that it does not overheat and damage surrounding components, making it a great choice for these types of applications.

The specific data is subject to PDF, and the above content is for reference

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