IXGN200N60

Current - Collector Cutoff (Max):	200µA
Base Part Number:	IXG*200N60
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
NTC Thermistor:	No
Input:	Standard
Input Capacitance (Cies) @ Vce:	9nF @ 25V
Series:	HiPerFAST™
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 100A
Power - Max:	600W
Current - Collector (Ic) (Max):	200A
Voltage - Collector Emitter Breakdown (Max):	600V
Configuration:	Single
IGBT Type:	--
Part Status:	Obsolete

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IXGN200N60 is a high-voltage, high-performance insulated gate bipolar transistor (IGBT) module manufactured by Tixi Semiconductor Corporation. It consists of two IGBTs, two anti-parallel free-wheeling diodes and the gate driver ICs which are encapsulated in one single package. The device features both low on-state resistance and a low switching speed, allowing higher power efficiency and system size reduction.The IXGN200N60 is typically used in various industrial and home appliance applications such as solar inverters, UPS systems, motor drives, welding systems, motor control, linear motor drivers, and other power control systems.The IXGN200N60 IGBT module provides an ideal solution for high power applications with its low conduction losses, low switching losses, and high temperature-capable design. The module has an on-state current of 200A, collector-emitter voltage of 1200V, and collector-base voltage of 1600V. It also features a switching frequency up to 18kHz, a total gate charge of 45nC, a max. junction temperature up to 175°C, a max. storage temperature up to 175°C, and a maximum case temperature of 120°C.The IXGN200N60 module is designed to operate with very low gate drive power consumption in high temperature environments, which makes it suitable for high performance applications. The module offers an isolated baseplate with an integrated gate drive transistor which allows for a compact design and improved thermal performance. The device also has an integrated bootstrap diode which eliminates the need for an external diode in some applications.The working principle of the IXGN200N60 module is based on the fact that the IGBT is essentially a voltage-controlled device. When a voltage is applied to the gate, it creates an electric field between the collector and the emitter, which in turn modulates the current between them. The current can then be regulated by increasing or decreasing the applied voltage.The advantages of the IXGN200N60 module are numerous, ranging from low on-state resistance to low switching losses and fast switching speeds. These features make it suitable for a wide range of applications, including solar inverters, UPS systems, motor drives, welding systems, motor control, and linear motor drivers. Moreover, the device is capable of working in high temperature environments, making it suitable for high power applications.

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