IXGN200N60B3

Current - Collector Cutoff (Max):	50µA
Base Part Number:	IXG*200N60
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
NTC Thermistor:	No
Input:	Standard
Input Capacitance (Cies) @ Vce:	26nF @ 25V
Series:	GenX3™
Vce(on) (Max) @ Vge, Ic:	1.5V @ 15V, 100A
Power - Max:	830W
Current - Collector (Ic) (Max):	300A
Voltage - Collector Emitter Breakdown (Max):	600V
Configuration:	Single
IGBT Type:	PT
Part Status:	Active

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Introduction to IXGN200N60B3

The IXGN200N60B3 is a 1200V/ 200A Insulated Gate Bipolar Transistor Module that has been designed as a highly reliable component for use in industrial applications. This product combines the fast switching properties of a power MOSFET with the current capacity of a bipolar junction transistor, in a standard package. It is designed for use in applications such as DC/AC converter in motor drives, high speed switching and power management circuits.

Application Field and Working Principle of IXGN200N60B3

The IXGN200N60B3 is an IGBT used for applications that require high current capacity and fast switching. It is typically used in high power DC/AC converters and power management circuits. The IXGN200N60B3 is also used for medium frequency applications due to its high gain bandwidth, fast switching times, and low crossover current.The IXGN200N60B3 is based on a vertical double diffusion structure, with an insulated gate channel that is formed between an n-type primary and an n-type secondary emitter. The IGDTR gate is located on the n-type secondary emitter and is used to control the current flow.An input signal (from 0V to +15V) is applied to the IGDTR gate. When an input signal is applied to the IGDTR gate, the voltage on the gate will be raised to the desired voltage level and the current will be allowed to flow through the device, forming a conductive channel. This conductive channel can be modulated by changing the voltage applied to the IGDTR gate.The IXGN200N60B3 is capable of sustaining high blocking voltages up to 1200V and can handle high current up to 200A. The device has been designed to operate in the temperatures range from -55 to +150 degrees Celsius.

Advantages of IXGN200N60B3

The IXGN200N60B3 is a highly reliable and robust IGBT, which is suitable for use in industrial applications requiring high reliability and high power output. It has wide operating frequencies, fast switching speeds, low crossover currents, and low losses during switching. The IGBT is also equipped with a built-in avalanche protection.Furthermore, the IXGN200N60B3 has low switching losses, high efficiency, high power density, and low noise. Due to its high current capacity, it can be used in applications that demand high current capacity and fast switching. The IXGN200N60B3 is also resistant to electromagnetic interference and has excellent thermal stability.

Conclusion

The IXGN200N60B3 is an advanced Insulated Gate Bipolar Transistor Module, which is suitable for use in industrial applications requiring high reliability and high power output. It operates through a vertical double diffusion structure with an insulated gate channel, and can handle a wide range of input signals, from 0 to 15V. The IXGN200N60B3 offers high current capacity, fast switching, and low losses during switching, making it an ideal device for use in DC/AC converters and power management circuits.

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