Allicdata Part #: | IXGN200N60A2-ND |
Manufacturer Part#: |
IXGN200N60A2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 200A SOT-227B |
More Detail: | IGBT Module PT Single 600V 200A 700W Chassis Mount... |
DataSheet: | IXGN200N60A2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 50µA |
Base Part Number: | IXG*200N60 |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 9.9nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.35V @ 15V, 100A |
Power - Max: | 700W |
Current - Collector (Ic) (Max): | 200A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Configuration: | Single |
IGBT Type: | PT |
Part Status: | Obsolete |
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As one of the most important elements of modern power electronics, IGBTs have enabled a great deal of technology to emerge over the past several decades. A particularly powerful model of IGBT for power applications is the IXGN200N60A2 module, which has numerous advantages compared to other solutions. This article will provide an overview of the IXGN200N60A2’s application fields and working principle.
IGBTs, short for Insulated Gate Bipolar Transistors, are one of the most important elements used in power applications. An IGBT consists of a bipolar transistor and an insulated gate OR diode, where the diode helps to ensure that the transistor has a fixed direction of current flow. As such, an IGBT can both switch ON and OFF rapidly, making it an excellent choice for power applications where fast switching is required. This also means that IGBTs can be used in applications such as variable frequency drives, PLCs, and motor control.
The IXGN200N60A2 module is a high-performance IGBT module from Infineon Technologies. It has a 200V/240A rating and is particularly well-suited for motor control applications. It is capable of switching rapidly at high frequencies, with a dv/dt rating of up to 4,400V/us and a trr rating of up to 600ns. It also has an impressive power rating of up to 15kW and a decoupling inductance of up to 1400µH.
In addition to its impressive power rating, the IXGN200N60A2 module has numerous other features which make it an ideal choice for power applications. It has a temperature rating of up to 125°C and a C3 junction temperature of up to 175°C, making it suitable for use in high-temperature environments. It also has a low on-state voltage drop and a low turn-on over-current penalty, making it an efficient solution for power applications.
The working principle of the IXGN200N60A2 module is based on the same principle as all IGBTs – when an adequate level of gate current is applied, the diode will conduct and the transistor will switch ON. When the gate current is removed, the diode will no longer conduct and the transistor will switch OFF. As such, the IXGN200N60A2 module can rapidly switch between the two states, making it ideal for applications such as motor control.
In conclusion, the IXGN200N60A2 module is an extremely powerful and efficient IGBT module. Its high power rating, low on-state voltage drop, rapid switching speed and impressive temperature rating make it an excellent choice for power applications such as motor control. Furthermore, its working principle is based on the same concept as all IGBTs and is therefore relatively straightforward.
The specific data is subject to PDF, and the above content is for reference
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