FDPF20N50T

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FDPF20N50T Application Field and Working Principle

The FDPF20N50T is a type of high power switch from the ST Microelectronics range of Field-Effect Transistors series. It is a N-channel power MOSFET with improved avalanche characteristics, designed for low on-state resistance and high switching capabilities in various applications. It is a surface-mounted transistor package housed in a TO-220AB plastic-case, and operates at Collector-Emitter voltage range of 500V. Fast and fairly efficient, it offers a maximum power dissipation of 75W, 30V-Drain Source Voltage and a low gate-source capacitance of around 25nF.

This transistor is mainly used in switching circuits, and provides an excellent solution for direct AC line inrush current control, short circuit protection, and low-inductive switch-mode power supplies (SMPS). It has a collector-emitter breakdown voltage of around 500V, and a maximum on-state resistance of 0.037Ω (at 25℃). FDPF20N50T is popularly used in consumer electronics and audio power amplifiers, this is due to its reliable, high speed and very efficient performance protecting your devices from short circuits and inrush current.

FDPF20N50T Working Principle

The FDPF20N50T is a power MOSFETs, operated with a biasing voltage Vgs applied between the gate-source terminals. The transistor is off when the voltage between the gate and source is zero, and it is turned on when the voltage is turned to a negative value (below the threshold voltage).

The current amplification factor (hfe) of the FDPF20N50T MOSFET is very large, due to its depletion layer and significant increases in current can flow through the Drain-Source (gate) when a negative voltage, such as -30V, is applied.

When the voltage applied to the Gate gets to a negative value (Vgs) larger than or equal to the threshold voltage, the current from Drain to Source can be determined by the following equation:

I_DS= g_m*(Vgs-VT)

where gm is the transconductance parameter, and Vt is the threshold voltage.

It is also important to note that the field-effect transistors increase the current flowing through the drain-source (gate) when the voltage applied to the Gate falls to a negative value beneath the threshold voltage.

The FDPF20N50T is a fast switching, low gate latching and gate drive characteristics, and has a low gate lag. These features make it highly suitable in applications that need a quick and reliable response in extreme conditions and temperature changes.

Conclusion

The FDPF20N50T is an excellent solution for power switching applications requiring fast switching capabilities, low on-state resistances and high power ratings. Its low gate-source capacitance allows the device to respond quickly to changes in gate voltage, and the high transconductance parameters provide a large amount of current from the drain-source (gate). Finally, the transistor is protected from short circuits and inrush current with its collector-emitter breakdown voltage, making it a reliable and high performance device especially for use in consumer electronics and audio power amplifiers.

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