Allicdata Part #: | FDPF045N10A-ND |
Manufacturer Part#: |
FDPF045N10A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 67A TO-220-3 |
More Detail: | N-Channel 100V 67A (Tc) 43W (Tc) Through Hole TO-2... |
DataSheet: | FDPF045N10A Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 67A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5270pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 43W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F-3 |
Package / Case: | TO-220-3 Full Pack |
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N-channel MOSFETs are one of the essential transistors used in a wide range of applications. One popular, and widely used, example of this is the FDPF045N10A. This FET serves as an ideal solution for many consumer, industrial and automotive applications, and can be used both as an amplifier and a switch.
The FDPF045N10A is an N-Channel enhancement mode MOSFET operating at a specified drain-source voltage of 45 V and a specified drain current of 10 A. The N-channel MOSFETs can operate over a broad range of temperatures and frequencies, from -55°C to 175°C and up to 1 MHz depending on the load conditions. The FDPF045N10A offers excellent on-state resistance and a very low threshold voltage, which makes it perfect for switching applications where quick action is required. For example, it can be used as a high-efficiency switch in any application requiring a low operating voltage.
The FDPF045N10A has a very simple structure. At its core is a gate-drain structure where the gate serves as the control element, controlling current flow between the source and drain. The gate electrode is connected to an electric field that is applied to the source and drain of the FET. This electric field is produced when a small voltage is applied across the gate and drain, which allows electric current to flow from the source to the drain, thus turning the FET on.
The FDPF045N10A features a very low on-state resistance, allowing for a high switching efficiency, and is highly sensitive to the applied gate voltage. An applied voltage at the gate to the pinch-off voltage will cause the FET to enter its linear region, producing a voltage and current relationship between the source and drain. The linearity of the FET also makes it ideal for use in amplifier applications.
Due to the FDPF045N10A’s wide range of current and voltage ratings and its low threshold voltage, it can be used in a variety of power switching, level shifting, high-performance switching, low-frequency amplifier and low-noise amplifier applications. This FET also offers excellent power dissipation and power dissipation efficiency, which makes it suitable for use in automotive applications, where stringent power-consuming requirements must be met. The FDPF045N10A also provides a very low switching time and extremely low forward voltage drop, which makes it a great choice for power supply-related applications.
In conclusion, the FDPF045N10A offers many benefits such as improved power efficiency, excellent performance, and low operating voltage, making it a great choice for a wide range of applications. It offers a very good combination of electrical performance characteristics, making it an ideal solution for those looking for a reliable and efficient MOSFET solution.
The specific data is subject to PDF, and the above content is for reference
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