Allicdata Part #: | FDPF7N50U-G-ND |
Manufacturer Part#: |
FDPF7N50U-G |
Price: | $ 1.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5A TO-220F |
More Detail: | N-Channel 500V 5A (Tc) 31.3W (Tc) Through Hole TO-... |
DataSheet: | FDPF7N50U-G Datasheet/PDF |
Quantity: | 50 |
1 +: | $ 1.58130 |
10 +: | $ 1.42758 |
100 +: | $ 1.14729 |
500 +: | $ 0.89233 |
1000 +: | $ 0.73936 |
Specifications
Series: | UltraFRFET™, Unifet™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16.6nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 940pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 31.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Description
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The FDPF7N50U-G from Fairchild Semiconductor is a N- and P-channel enhancement-mode vertical D-MOS transistor with a super-junction structure. This semiconductor device is designed for applications requiring superior switching performance for devices in the voltage range from 40 V to 60 V. It is well suited for a wide range of applications in the automotive and consumer markets.The FDPF7N50U-G is a non-logic level device, meaning it can be operated with magnets, pulses, and other analog signals. It contains two transistors—one N-channel MOSFET and one P-channel MOSFET—that work together to control an AC load. It can be used as a H-bridge driver, a motor driver, an AC switch, and more.The FDPF7N50U-G is a highly efficient device due to its low on-resistance of under 7 mΩ. This low resistance is achieved by the use of a wide area of N- and P-channel vertical structure transistors. The wide area of transistors combined with the the advanced Super-Junction technology helps minimize voltage drops across the device, thus providing superior switching performance.The FDPF7N50U-G has a peak operating temperature of 175°C and its Gate to Source withstand voltage is up to ±20 V. The body diode of this device allows for reverse recovery time of at most 300 ns. This device also has a maximum Avalanche energy of 1.2mJ @ Vds= 60 V. These features, along with its low on-resistance, make it an ideal choice for high-power applications.To use the FDPF7N50U-G, the gate and source must be connected to a power source (VCC and GND), and the drain is connected to the load. A simple circuit diagram is shown below. The voltage of VCC must be between 10 V and 20 V and the voltage of Vds must be less than the breakdown voltage of the MOSFETs.The FDPF7N50U-G can be used in various applications such as AC and DC motor drivers, H-bridge drivers, AC switches, and more. It is primarily used for power switches in consumer and automotive markets owing to its high efficiency and minimal voltage drops. It is also used in the production of portable appliances and industrial electronics.The FDPF7N50U-G from Fairchild Semiconductor is a N- and P-channel enhancement-mode vertical D-MOS transistor with a super-junction structure. It is used in various applications requiring superior switching performance in the voltage range from 40 V to 60 V. It is highly efficient due to its low on-resistance and is used in the production of consumer and automotive products, as well as portable appliances and industrial electronics.
The specific data is subject to PDF, and the above content is for reference
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