Allicdata Part #: | FDPF12N50FT-ND |
Manufacturer Part#: |
FDPF12N50FT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 11.5A TO-220F |
More Detail: | N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO... |
DataSheet: | FDPF12N50FT Datasheet/PDF |
Quantity: | 1000 |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1395pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
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FDPF12N50FT is an enhancement mode power MOSFET which belongs to the IRFPN family of products. It can handle frequencies up to 10MHz and operate in temperatures up to 175°C.
The FDPF12N50FT has a maximum continuous drain-source current of around 90A and a maximum continuous drain-source voltage of 500V. It also has a drain-source breakdown voltage of about 540V. The maximum junction temperature for the FDPF12N50FT is 175°C.
The FDPF12N50FT can be used in numerous applications where fast switching and high current capabilities are needed. It is an excellent choice for high efficiency power supplies and dc-dc converters, as well as for lighting, motor control, and other industrial applications.
The FDPF12N50FT operates in enhancement mode, which means that the device is normally off and must be turned on by applying a voltage to the gate. This voltage, known as the gate-source voltage (VGS), controls the electrical properties of the device. When the voltage applied to the gate is higher than a certain threshold, a channel is formed between the source and the drain, allowing current to flow. The channel is then controlled by the drain-source voltage.
The on-resistance of the device (also known as RDS(on)) decreases as VGS increases. The increase in RDS(on) is typically due to the increase in VGS, but the decrease can also be attributed to temperature changes, since the device has to keep up with the changing conditions of the system.
The FDPF12N50FT has a low gate charge (Qg) and a low gate-drain charge (Qgd). This makes the FDPF12N50FT ideal for applications where fast switching is required, such as in dc-dc converters. The FDPF12N50FT can also be used in motor control circuits, where the low gate charge helps reduce power losses due to power cycling.
In addition to its fast switching capabilities, the FDPF12N50FT also offers excellent power density and low power losses due to its low gate charge and high current rating. The device has a high input capacitance, which makes it ideal for high frequency applications. It also has a low output capacitance, which helps reduce switching losses under high current conditions.
To sum up, the FDPF12N50FT is an ideal choice for applications that require fast switching and high current capabilities, as well as high power density and low power losses. Its ability to operate in temperatures up to 175°C makes it suitable for harsh environments. The device is also ideal for motor control, lighting, and other industrial applications thanks to its low gate charge and high current rating.
The specific data is subject to PDF, and the above content is for reference
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