FDPF12N50FT Allicdata Electronics
Allicdata Part #:

FDPF12N50FT-ND

Manufacturer Part#:

FDPF12N50FT

Price: $ 1.66
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 11.5A TO-220F
More Detail: N-Channel 500V 11.5A (Tc) 42W (Tc) Through Hole TO...
DataSheet: FDPF12N50FT datasheetFDPF12N50FT Datasheet/PDF
Quantity: 1000
1 +: $ 1.66000
10 +: $ 1.61020
100 +: $ 1.57700
1000 +: $ 1.54380
10000 +: $ 1.49400
Stock 1000Can Ship Immediately
$ 1.66
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FDPF12N50FT is an enhancement mode power MOSFET which belongs to the IRFPN family of products. It can handle frequencies up to 10MHz and operate in temperatures up to 175°C.

The FDPF12N50FT has a maximum continuous drain-source current of around 90A and a maximum continuous drain-source voltage of 500V. It also has a drain-source breakdown voltage of about 540V. The maximum junction temperature for the FDPF12N50FT is 175°C.

The FDPF12N50FT can be used in numerous applications where fast switching and high current capabilities are needed. It is an excellent choice for high efficiency power supplies and dc-dc converters, as well as for lighting, motor control, and other industrial applications.

The FDPF12N50FT operates in enhancement mode, which means that the device is normally off and must be turned on by applying a voltage to the gate. This voltage, known as the gate-source voltage (VGS), controls the electrical properties of the device. When the voltage applied to the gate is higher than a certain threshold, a channel is formed between the source and the drain, allowing current to flow. The channel is then controlled by the drain-source voltage.

The on-resistance of the device (also known as RDS(on)) decreases as VGS increases. The increase in RDS(on) is typically due to the increase in VGS, but the decrease can also be attributed to temperature changes, since the device has to keep up with the changing conditions of the system.

The FDPF12N50FT has a low gate charge (Qg) and a low gate-drain charge (Qgd). This makes the FDPF12N50FT ideal for applications where fast switching is required, such as in dc-dc converters. The FDPF12N50FT can also be used in motor control circuits, where the low gate charge helps reduce power losses due to power cycling.

In addition to its fast switching capabilities, the FDPF12N50FT also offers excellent power density and low power losses due to its low gate charge and high current rating. The device has a high input capacitance, which makes it ideal for high frequency applications. It also has a low output capacitance, which helps reduce switching losses under high current conditions.

To sum up, the FDPF12N50FT is an ideal choice for applications that require fast switching and high current capabilities, as well as high power density and low power losses. Its ability to operate in temperatures up to 175°C makes it suitable for harsh environments. The device is also ideal for motor control, lighting, and other industrial applications thanks to its low gate charge and high current rating.

The specific data is subject to PDF, and the above content is for reference

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