Allicdata Part #: | FDPF33N25TRDTU-ND |
Manufacturer Part#: |
FDPF33N25TRDTU |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 250V TO220F |
More Detail: | N-Channel 250V 37W (Tc) Through Hole TO-220F (LG-... |
DataSheet: | FDPF33N25TRDTU Datasheet/PDF |
Quantity: | 775 |
1 +: | $ 1.21590 |
10 +: | $ 1.09620 |
100 +: | $ 0.88106 |
800 +: | $ 0.61872 |
1600 +: | $ 0.56781 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2135pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 37W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F (LG-Formed) |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
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FDPF33N25TRDTU is a type of single layered MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is designed to meet a wide range of requirements and to provide enhanced reliability in challenging operating conditions. MOSFETs are versatile components that can serve as switches, act as amplifiers, or work as analog signal processors. The FDPF33N25TRDTU is especially suitable for use in applications where space is limited, such as consumer electronics and portable devices.
This MOSFET device is based on the easily understood and familiar principle of FETs (Field Effect Transistors) wherein the application of electromagnetic fields creates a field of effect on which electrons move freely. As the field is created, a potential difference is created between two terminals, the gate and the drain, and an electric current is allowed to travel through the device. This current can then be used to power up or switch off a device.
FDPF33N25TRDTU is a general-purpose MOSFET device, having a maximum drain-source voltage (V DS ) of -33V and a low threshold voltage (V GS ) of 2.5V. The device also has a Breakdown Voltage (BV DS ) of 33V and a maximum Drain Current (I D ) of -8.0A. These features make the FDPF33N25TRDTU an ideal device for applications that require a very low operating voltage and a low on-resistance.
FDPF33N25TRDTU is mainly used in switching applications where low power consumption and low heat generation are desirable. The device can also be used as a buffer, where it helps to increase input impedance and reduce noise and distortion. In addition to being used in digital circuits, the FDPF33N25TRDTU has also been used in analog applications, where its low operating voltage and low on-resistance are favored.
The FDPF33N25TRDTU is also suitable for low-voltage and space-limited applications, such as consumer electronic products, automotive electronics, and portable devices. The device is also ideal for applications that require fast switching times and high reliability. Furthermore, the FDPF33N25TRDTU is an effective device for increasing battery life in portable devices, as its low on-resistance reduces the amount of current flowing through the device.
FDPF33N25TRDTU is a highly reliable single layered MOSFET that offers a wide range of features and is suitable for a variety of applications. The device offers excellent electrical characteristics and is capable of fast switching speeds, making it an ideal choice for various high-performance, low-power and space-limited applications. The device also offers improved device reliability, making it a reliable choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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