FDPF18N20FT Allicdata Electronics
Allicdata Part #:

FDPF18N20FT-ND

Manufacturer Part#:

FDPF18N20FT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 18A TO-220F-3
More Detail: N-Channel 200V 18A (Tc) 41W (Tc) Through Hole TO-2...
DataSheet: FDPF18N20FT datasheetFDPF18N20FT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: UniFET™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
FET Feature: --
Power Dissipation (Max): 41W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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The FDPF18N20FT is a regulation field-effect transistor (FET), also known more specifically as an insulated-gate bipolar transistor (IGBT), and is suitable for use in many contemporary electronic devices. It is a power transistor and has both excellent switching speed and a low on-state resistance, making it useful for both low- and high-current applications. The FDPF18N20FT is designed for the heavy-duty industrial and consumer electronic markets, and is robust enough to withstand harsh environments.

An FET is a three-terminal electronic device. The terminals are known as the source, gate, and drain. Electrons are transferred from the source to the drain by way of an electric field generated by the gate terminal. FET operation can be controlled by varying the gate-source voltage, resulting in either a higher current flow or a decreased current flow in the channel between the source and drain. The conductive channel of an FET is resistive, meaning that in order to move electrons through it, a higher voltage must be applied. As the voltage increases, the resistance decreases, resulting in increased current flow.

The FDPF18N20FT is a P-channel FET. This means that the current flows from the drain to the source when a positive voltage is applied to the gate terminal. The FDPF18N20FT is made from a silicon carbide (SiC) material and is designed to handle high current densities, making it a powerful choice for many applications.

The FDPF18N20FT has a maximum on-state drain-source voltage of 600 V, a maximum on-state drain-source resistance of 1Ω, and a maximum on-state drain current of 18 A at 25°C. It is designed to handle high frequency switching and can operate at frequencies up to 10 MHz. The FDPF18N20FT also features a wide range of temperature operating range, with a minimum operating temperature of -55°C and a maximum operating temperature of 175°C. It is rated for a maximum continuous drain current of 30 A and a maximum peak drain current of 42 A.

The FDPF18N20FT is used in many different types of applications, including motor drives, power converters, power supplies, solar inverters, welding units, and Uninterruptible Power Supplies (UPS). It is also used in power switching applications such as AC motor control and DC motor control.

The FDPF18N20FT is a versatile and reliable FET, making it suitable for many common applications. Its high current rating, low on-state resistance, and fast switching speed make it an excellent choice for both power electronics and switching power supplies. Its wide range of temperature range, solid construction, and high-power output make it suitable for a variety of industrial and commercial applications, including those in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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