Allicdata Part #: | FDPF51N25RDTUOS-ND |
Manufacturer Part#: |
FDPF51N25RDTU |
Price: | $ 2.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 51A TO220F |
More Detail: | N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-2... |
DataSheet: | FDPF51N25RDTU Datasheet/PDF |
Quantity: | 800 |
1 +: | $ 2.56410 |
10 +: | $ 2.28690 |
100 +: | $ 1.87538 |
800 +: | $ 1.37224 |
1600 +: | $ 1.28076 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3410pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F (LG-Formed) |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
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FDPF51N25RDTU is a Field-Effect Transistor (FET). It is a single transistor featuring a source-drain channel, controlled by a gate voltage. It is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistors) designed to switch multiple electrical and electronic signals with extreme speed and accuracy. This MOSFET is specifically designed to be used in the production of electronic systems, such as audio and video devices, computers, and some automotive systems.
It is a single MOSFET suitable for applications where high speed switching is needed, such as driving motors or controlling power circuits. It has low on-resistance (Rdson) compared to other types of transistors, making it ideal for applications where power efficiency and heat dissipation are key concerns. It also has a high breakdown voltage, which allows for the use of larger voltages to be used in the circuit.
FDPF51N25RDTU works in the same way as other FETs, with a gate providing a control signal to the source-drain channel. The signal that is passed through the gate is used to control the conduction between the source and drain of the MOSFET. The magnitude of this signal controls the amount of current that can pass through the FET. When there is no signal, the FET is closed. With an increasing signal, the FET is increasingly opened, allowing more current to flow.
The gate is a side gate, meaning it is isolated from the source and drain electrode, making the resistance between them higher and the on-resistance lower. This type of MOSFET also works well with AC signals, as it will not open too readily to the positive peaks, resulting in better control over the current flow.
FDPF51N25RDTU has multiple application fields. It can be used to drive motors, control power circuits, and for signal switching. It is commonly used in audio and video systems, computers, and some automotive electronics due to its fast switching time (as low as 250 ns). Other applications include switching power in LED lighting systems, switching current in DC-DC converters, and signal signal sorting in communication systems.
This MOSFET can be used in many different projects and systems, particularly those that require high speed, accuracy, and power efficiency. With its low on-resistance and high breakdown voltage, it is incredibly useful in many different types of electronic systems. Its wide array of application fields make it a versatile component which can be adapted to a variety of different uses.
The specific data is subject to PDF, and the above content is for reference
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