Allicdata Part #: | FDPF13N50FT-ND |
Manufacturer Part#: |
FDPF13N50FT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 12A TO-220F |
More Detail: | N-Channel 500V 12A (Tc) 42W (Tc) Through Hole TO-2... |
DataSheet: | FDPF13N50FT Datasheet/PDF |
Quantity: | 139 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1930pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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The FDPF13N50FT is a type of high-performance and highly integrated long-channel field effect transistor (FET) commonly found in power control applications. It is extremely popular due to its low on-state resistance, large current capability, and small junction-to-ambient thermal resistance. This makes it ideal for applications in power management, automotive, and industrial equipment.
The FDPF13N50FT is a N-channel enhancement mode FET, which utilizes the mainly benefit of an enhancement MOSFET. N-channel devices have a much wider applications range than P-channel devices due to their higher voltage and current-handling capabilities, as well as higher switching speeds. The N-Channel FET utilizes a dual-gate structure in order to enable improved breakdown voltage, greater input and output capacitance, and lower leakage current.
The FDPF13N50FT has good breakdown voltage of 500V, low on-state resistance of 0.09Ω, and high current capability of 13A. It is also well-suited for high-side power switching applications such as Solenoid control and high current drive for inverters and DC/DC converters. Additionally, it features a fast switching speed, with an ultra-low gate charge of 7.5nC, which leads to decreased power dissipation and increases efficiency.
In typical power control applications, the FDPF13N50FT is used to control the amount of power that is run to a specific load at any given time. This is done by regulating the flow of current and voltage. When the FET is on, current will flow, thus increasing the power output to the load. When the FET is off, current will not flow, and the power output will be minimized.
The FDPF13N50FT is typically operated at low voltage, usually 4.5V or less. Its dual-gate structure provides improved breakdown voltage and lower leakage current than conventional single-gate MOSFETs. Its low reverse leakage and lower capacitance also greatly reduce switching losses, as well as power consumption, making it an ideal choice for power management applications.
The FDPF13N50FT is an ideal choice for high-side switching applications. Its high voltage and current-handling capabilities make it suitable for use in most power management applications. Its low on-state resistance, small junction-to-ambient thermal resistance, and fast switching speed mean that it can help reduce power loss and increase efficiency. With its dual gate structure, the FDPF13N50FT is also capable of providing improved breakdown voltage and lower leakage current. Additionally, its low gate charge helps to reduce power dissipation and increase efficiency.
The specific data is subject to PDF, and the above content is for reference
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