1N6473US

Current - Peak Pulse (10/1000µs):	36.5A
Supplier Device Package:	G-MELF (D-5C)
Package / Case:	SQ-MELF, G
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	1500W (1.5kW)
Series:	--
Voltage - Clamping (Max) @ Ipp:	41.4V
Voltage - Breakdown (Min):	27V
Voltage - Reverse Standoff (Typ):	24V
Unidirectional Channels:	1
Type:	Zener
Part Status:	Active
Packaging:	Bulk

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TVS - Diodes

Transient Voltage Suppression (TVS) diodes are one of the most popular solutions for protecting sensitive electronics from transient voltage disturbances, such as those induced by Electrostatic Discharge (ESD), lightning strikes and other voltage surges. The 1N6473US, in particular, is a device specially designed to protect semiconductor circuits from the stress of overvoltage conditions.

Application Field and Working Principle

The 1N6473US is a silicon avalanche transistor for Transient Voltage Suppression (TVS) applications that provides a higher clamping voltage than standard TVS Diodes. It features an extended drill region which allows for larger voltage jumps than standard TVS diodes and can withstand much greater transient voltages.The 1N6473US is suitable for a variety of applications where robust transient protection is required, such as automotive, industrial, communication, consumer, medical, and military applications.The 1N6473US works by clamping the incoming transient voltage to a maximum allowable level through the avalanche breakdown mechanism. When the applied transient voltage exceeds the device\'s breakdown voltage, the device will quickly clamp the voltage to a predetermined level by rapidly turning on a large amount of internal current and suppressing the transient.

Device Structure

The 1N6473US is designed to be used in the most rugged environments and is constructed from High-K Insulated Gate Field–Effect Transistors (IGFETs). These devices are well suited for high frequency applications due to their small size and low saturation voltage.The device is further composed of a anode, cathode, and gate, all made from highly conductive materials. The anode and cathode are connected together in series and form a bridge diode. The gate is isolated from the anode and cathode and allows the device to be triggered when the voltage applied to the gate exceeds the threshold voltage.

High Performance Characteristics

The 1N6473US is designed to provide a high level of differential peak pulse power and current, and a low clamping voltage. It features a low clamping voltage of 15.2V (max) vs. 17.2V (max) of a standard TVS diode. The device also has a High maximum peak current of 1000A (8/20μs); this allows it to absorb high-current transients without becoming damaged. The 1N6473US is designed for a maximum operating temperature range of -65°C to +175°C and has a high maximum energy rating of 525 mJ (2/10μs).

Conclusion

The 1N6473US is a powerful, reliable, and robust device for suppressing transient voltage spikes. It is well suited for a variety of applications, thanks to its extended drill region, high peak current rating, and low clamping voltage. The device is also designed for operation in harsh environments, and its high maximum energy rating ensures it can absorb energy from high-power transients without becoming damaged.

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