| Allicdata Part #: | 1N6471USS-ND |
| Manufacturer Part#: |
1N6471US |
| Price: | $ 8.29 |
| Product Category: | Circuit Protection |
| Manufacturer: | Semtech Corporation |
| Short Description: | TVS DIODE 12V 22.6V GMELF |
| More Detail: | N/A |
| DataSheet: | 1N6471US Datasheet/PDF |
| Quantity: | 1000 |
| 125 +: | $ 7.53445 |
| Current - Peak Pulse (10/1000µs): | 66A |
| Supplier Device Package: | G-MELF (D-5C) |
| Package / Case: | SQ-MELF, G |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Series: | -- |
| Voltage - Clamping (Max) @ Ipp: | 22.6V |
| Voltage - Breakdown (Min): | 13.6V |
| Voltage - Reverse Standoff (Typ): | 12V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Part Status: | Active |
| Packaging: | Bulk |
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Transil diodes are also known as TVS (Transient Voltage Suppressor) diodes. They are usually used as protection against transient voltage spikes in a circuit. A 1N6471US is an example of a Transil diode, and it is used to protect electronic equipment from being damaged by surges in voltage. This article will discuss the application field and working principle of the 1N6471US.
Application Field
The 1N6471US is a high voltage Transil diode designed for applications in which high transient voltage spikes are present. It is used to protect the circuit from overvoltages that could potentially damage sensitive electronic components. The 1N6471US is suitable for use in industrial and automotive environments, and can be used with a variety of voltage levels and conditions. The diode is rated for up to 5kV of surge voltage protection, and can handle currents up to 1.5A.
Working Principle
The 1N6471US is a unidirectional Transil diode that is designed to protect against voltage surges. When the voltage exceeds a certain threshold, the diode will immediately become conductive and divert the excess current to ground and away from the protected components. The 1N6471US has a fast response time and can react to transient voltage spikes in just a few nanoseconds. The diode is also designed to safely absorb energy from the transient voltage surge and dissipate it as heat.
When the transient voltage surge passes, the diode will immediately return to its non-conductive state, allowing the circuit to continue operating normally. The 1N6471US is designed to be durable and able to withstand multiple transient voltage spikes without sustaining any damage. It is also designed to be able to handle very high transient voltage spikes without causing undue damage to other components on the circuit.
Conclusion
The 1N6471US is a Transil diode designed for use in circuits where high transient voltage spikes may be present. It can handle up to 5kV of surge voltage and 1.5A of current, and is suitable for use in both industrial and automotive environments. The 1N6471US has a fast response time and is designed to safely absorb energy from the transient voltage and dissipate it as heat. The diode will return to its non-conductive state once the voltage surge has passed, allowing the circuit to return to normal operation.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| 1N6475US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 40.3V 63.5V GME... |
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| 1N6475 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
| 1N6479-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6476US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 51.6V 78.5V GME... |
| 1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6461 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 5V 9V AXIAL |
| 1N6478-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
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1N6471US Datasheet/PDF