| Allicdata Part #: | 1N6487US-ND |
| Manufacturer Part#: |
1N6487US |
| Price: | $ 9.87 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | ZENER DIODE |
| More Detail: | Zener Diode |
| DataSheet: | 1N6487US Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 8.88391 |
| Series: | * |
| Part Status: | Active |
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Diodes are an essential component in virtually every electronic circuit. They are two-terminal devices with two different functions. When connected forward, they act as a rectifier that passes current in one direction only. When connected in reverse, they act as a Zener diode, which has a breakdown voltage and when a voltage is applied in the reverse direction, the diode rapidly decreases in resistance allowing significant current to pass. The 1N6487US is a 500mW surface mountable Zener diode and can be regarded as a compact, low-cost and effective electrical component.
The 1N6487US is a low-power Zener diode with a breakdown voltage of 5.1V. It has a power dissipation of 500mW maximum, reverse stand-off voltage of 5.1V, and a maximum operating temperature of +85 degrees Celsius. It is constructed using a small, round glass package with a pair of vertical wire bonds on the back. With its very small size, the 1N6487US can be mounted on a wide range of boards and components in a variety of electronics equipment, including automated test systems, medical equipment, telecommunications products and computer networks.
The 1N6487US works through the following principle. When obtaining a forward current between the anode and cathode, the internal resistance of the diode increases, until it reaches its peak (breakdown voltage), where current begins to leak out. This leakage, or Zener current, becomes larger as the level of applied voltage is increased, but it remains constant once it reaches a certain level. The Zener voltage represents the voltage at which maximum leakage current occurs.
The 1N6487US is a perfect component for circuits with a wide range of power applications. Its reverse stand-off voltage ensures that the diode is not damaged even if it is connected in reverse, making it a great choice for use in high-power components and even in safety-critical circuits. It is also a perfect choice for low-power circuits, as its low power dissipation ensures that it doesn\'t heat up easily even when the current flowing through it is low. The 1N6487US is also resistant to temperature, corrosion and vibration, making it suitable for applications in harsh environments.
In conclusion, the 1N64387US is an ideal component for low-power and high-power circuits, as it offers reverse stand-off voltage, low power dissipation, and excellent temperature, corrosion and vibration resistance. It is small and easy to mount, making it a perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N645-1/TR | Microsemi Co... | 0.0 $ | 1000 | SWITCHINGDiode Standard 2... |
| 1N6482HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N646 | Microsemi Co... | 1.08 $ | 1000 | SILICON SWITCHING DIODESD... |
| 1N6482HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N649-1 | Microsemi Co... | 3.14 $ | 217 | DIODE GEN PURP 600V 400MA... |
| 1N6461US | Microsemi Co... | -- | 414 | TVS DIODE 5V 9V B AXIAL |
| 1N6490US | Microsemi Co... | 11.77 $ | 59 | DIODE ZENER 5.1V 1.5W D5A... |
| 1N6467 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
| 1N6468US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 51.6V 78.5V |
| 1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N6475US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 40.3V 63.5V GME... |
| 1N6479HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6475 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
| 1N6479-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6476US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 51.6V 78.5V GME... |
| 1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6461 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 5V 9V AXIAL |
| 1N6478-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
| 1N6483-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6472 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 15V 26.5V AXIAL |
| 1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
| 1N6462US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 6V 11V |
| 1N6488US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
| 1N6483HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6489US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
| 1N6489 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6473 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 24V 41.4V AXIAL |
| 1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
| 1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
| 1N6469 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 5V 9V AXIAL |
| 1N6488 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6484-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 1KV 1A DO2... |
| 1N6473US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 24V 41.4V GMELF |
| 1N6481HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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1N6487US Datasheet/PDF