2N2906A Allicdata Electronics

2N2906A Discrete Semiconductor Products

Allicdata Part #:

2N2906A-ND

Manufacturer Part#:

2N2906A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: PNP SS GP AMP MED PWR TRANS.
More Detail: Bipolar (BJT) Transistor PNP 40V 600mA 400mW Thro...
DataSheet: 2N2906A datasheet2N2906A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Base Part Number: 2N2906
Description

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The 2N2906A is a small-signalEpitaxial PlanarPNP transistor created by Microsemi Corporation in 6-Pin Plastic TO-92 packages. It is a member of theMetal-Oxide-Semiconductor FieldThe Effect (MOS-FET) family ofsolid-state integrated circuits, and was designed for use in low voltage, low current applications. It is classified as a bipolar junction transistor (BJT) because it is made oftwo P-type and twoN-type semiconductor material layers.

The 2N2906A is typically used in audio and low-level switching applications, where high-current and high-voltage transistors are not required. It has a wide current-gain range and a low noise performance. It is constructed with two layers ofP-type semiconductor material and two layers ofN-type material, allowing each section to act as a controlling gate. The 2N2906A has a low turn-on voltage and a high current-gain cut-off frequency.

The working principle of the 2N2906A involves electron tunneling, which is a process in which an electron is emitted from one material and passes through an insulating barrier in order to reach another material. In the transistor, an electron is drawn from the N-type semiconductor layer towards the P-type layer. This process creates a negative charge at the P-type layer and a positive charge at theN-type layer.Since electrons exiting theN-type layerare accelerated by the electric field set up between the layers, the electrons can be controlled to vary the current flow. Thus, the 2N2906A is able to be used for low voltage and low current operations.

The 2N2906A has a wide variety of uses and applications, ranging from variable-speed motors to audio amplifiers. It is typically used in low-level switching applications, such as logic circuits and signal processing applications. It can also be used in switch circuits, as it can open and close a circuit by controlling current flow. Additionally, it can be used as an amplification device for audio signals, as it has a low noise performance. The 2N2906A is also used in analog-to-digital converters, as it is able to safely convert analog signals into digital signals.

The 2N2906A is an effective low voltage and low current switch and amplifier. Its application field has a wide range, from logic circuits to audio amplifiers. The 2N2906A is able to effectively control current flow, allowing it to be used in switch circuits or as an amplification device. The working principle of the 2N2906A involves electron tunneling, which allows the transistor to act as a controlling gate. Overall, the 2N2906A is an effective solid-state integrated circuit component with a variety of uses and applications.

The specific data is subject to PDF, and the above content is for reference

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