2N2906AUA

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 10V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, No Lead
Supplier Device Package:	4-SMD

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<p>The 2N2906AUA is a type of bipolar junction transistor (BJT) with a single current-conduction channel. It belongs to the family of NPN transistors. The prefix “2N” stands for parts belonging to the family of NPN transistors. The usage of this type of transistor is found mostly in voltage and current biasing applications, such as digital and analog circuits.</p><p>This type of transistor is manufactured by several companies, including Motorola, Sanyo, and ROHM Semiconductor. It has several different versions, such as 2N2906AUA-A (an NPN PNP dual-type transistor) and 2N2906AUA-E (an unbelievably low-noise NPN transistor).</p><p>The 2N2906AUA is a high-speed, high-linearity, and low-noise NPN transistor. It is suitable for a wide range of applications. It has a maximum emitter current of 500mA and a maximum collector-emitter voltage of -40V. It has a very low Collector-emitter saturation voltage, which makes it ideal for switching applications.</p><p>The main application field for the 2N2906AUA is found in linear amplification applications, such as amplifiers, oscillators, voltage regulators, audio circuits, switching circuits, digital logic circuit interfaces, power amplifiers, and so on. It is also very useful for voltage-sensing applications, as it can sense very low voltages, up to -40V.</p><p>The working principle of a bipolar junction transistor is based on its internal structure. The 2N2906AUA is composed of three regions: base, collector, and emitter. Current flows from the collector to the emitter when the base is biased, and this current can be controlled by the voltage applied to the base.</p><p>The current gain (or hFE) of the 2N2906AUA is quite high, allowing it to operate very efficiently in a wide range of applications. It has a typical hFE of 60 to 120, dependant on the amount of base current. The 2N2906AUA can also be used in reverse-biased applications, where the base is driven negative.</p><p>In summary, the 2N2906AUA is a versatile, high-performance, high-linearity, and low-noise bipolar junction transistor. It can be used in a wide variety of applications, including linear amplification, voltage sensing, and switching circuits. Its high current gain and low voltage-saturation enable it to be used in high-speed applications, as well as in reverse-biased configurations.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description