2N2946A Allicdata Electronics
Allicdata Part #:

2N2946A-ND

Manufacturer Part#:

2N2946A

Price: $ 10.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 35V 0.1A TO-46
More Detail: Bipolar (BJT) Transistor PNP 35V 100mA 400mW Thro...
DataSheet: 2N2946A datasheet2N2946A Datasheet/PDF
Quantity: 1000
100 +: $ 9.24378
Stock 1000Can Ship Immediately
$ 10.17
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Power - Max: 400mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-46-3
Supplier Device Package: TO-46-3
Description

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The 2N2946A is a single-transistor bipolar junction transistor (BJT) that is commonly used in various kinds of electronic applications. The device is specially designed with a high gain and wideband response, making it a great choice for applications that require low distortion, high reliability, and good linearity. To understand the application field and working principle of the 2N2946A, it is important to first understand the basic operation of a BJT.

BJTs are three-terminal devices that use current flow to generate a small electrical charge. These devices are divided into two main categories: n-type and p-type transistors. N-type transistors, such as the 2N2946A, use a negative charge to create a collector-emitter voltage, while p-type transistors use a positive charge. In both cases, the charge is generated by the current that flows through the base of the transistor, which helps to control the amount of current that passes between the collector and the emitter.

The 2N2946A is a high power NPN transistor, meaning that it has a high collector current and high current gain. The device is designed to be used in amplifier circuits, specifically those operating at high frequencies. This makes it ideal for applications such as switching, modulating, and amplifying audio signals, as well as for other high-frequency applications such as RF amplifiers. The 2N2946A is also often used in power supplies, motor control circuits, and general purpose analog circuits.

The 2N2946A has a wide range of applications due to its high current gain and low distortion response. It can be used in RF amplifier circuits as well as audio amplifier circuits for low-noise and high-linearity performance. Additionally, the device’s high power handling capability makes it suitable for applications such as motor control and power supply circuits.

The working principle of the 2N2946A is the same as that of other BJT devices. The current flowing through the base of the transistor is used to control the collector-emitter current. This current control is accomplished by the current flowing through the base, which modulates the voltage between the collector and emitter terminals to create a current path. The current gain is determined by the ratio of the collector current to the base current.

Another important factor to consider when using a 2N2946A transistor is its thermal characteristics. The device is designed to be used in applications that require a high tolerance for temperature changes. The device can handle temperatures between -55°C and +200°C, making it suitable for use in demanding applications.

The 2N2946A is an essential part for a wide range of applications, from audio amplifiers and high-frequency RF amplifiers to power supplies and motor control circuits. Its wideband response and high current gain make it a great choice for applications that require low distortion and good linearity. Additionally, its robust thermal characteristics make it suitable for demanding applications where temperatures may range drastically.

The specific data is subject to PDF, and the above content is for reference

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