2N2907AUB Allicdata Electronics

2N2907AUB Discrete Semiconductor Products

Allicdata Part #:

2N2907AUBMS-ND

Manufacturer Part#:

2N2907AUB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 60V 0.6A
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surf...
DataSheet: 2N2907AUB datasheet2N2907AUB Datasheet/PDF
Quantity: 1845
Stock 1845Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Description

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Introduction

2N2907AUB is a silicon NPN planar transistor manufactured in a TO-18 metal case, several pins when connecting to the circuit. It is presented with distinctly marked long leads making them easier to be recognized and avoid incorrect insertion. It has many applications; it is mainly used as a general-purpose amplifier or driver.

2N2907AUB application field

This popular and versatile transistor is used anywhere that a general-purpose amplifier, a switch or a converter is needed. Its most common uses include:

  • Use it in Astable multivibrator oscillator circuits that serve for functions such as radio frequency emitters, light detection and switching intermittent circuits.
  • Use it as a direct amplifier, mainly in audio circuits and small transmission amplifiers.
  • Used as a switch in reactive circuits such as fixing limits for proximity detectors and triggering for relay systems.
  • Additionally, it can be used in a variety of circuits that require amplifier, switch and converter applications.

2N2907AUB working principle

The 2N2907AUB is a Silicon NPN transistor that uses two semiconductor N-type and P-type materials separated by a thin insulating layer of P-type material that creates a PN junction. The 2N2907AUB is in a BJT (Bipolar Junction Transistor) configuration. BJT’s use two PN junctions called the base-emitter junction and the base-collector junction. The transistor has three pins. The left is collector, the middle is base and the right is emitter.

2N2907AUB

In the On state, the current flowing between the collector and the emitter generates an electromagnetic field, which attracts current from the base, allowing current to flow through collector and emitter. Therefore, this transistor works as an amplifier with almost two cascaded transistors. The base current controls the collector current, in other words, the value of base current determines the value of collector current. The input signal is applied to the base of the transistor while the collector is the output.

Conclusion

In summary, 2N2907AUB is a PNP Silicon planar transistor with a TO-18 metal case. It is a three-pin semiconductor device commonly used as a general-purpose amplifier and/or switch. This device has a very wide range of applications and is used to do many things such as act as an oscillator, limit proximity detector, amplifier and a switch in relay systems.

The specific data is subject to PDF, and the above content is for reference

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