2N2919L Allicdata Electronics
Allicdata Part #:

1086-20764-ND

Manufacturer Part#:

2N2919L

Price: $ 25.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS 2NPN 60V 0.03A TO78
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30...
DataSheet: 2N2919L datasheet2N2919L Datasheet/PDF
Quantity: 1000
100 +: $ 23.20210
Stock 1000Can Ship Immediately
$ 25.52
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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Transistors - Bipolar (BJT) - Arrays

The 2N2919L is an example of a transistor array, or a collection of transistors called an array. This particular model is composed of two transistors connected in a common base configuration. This means that the two transistors share a common base lead, which can be used to control the transistors.

This type of transistor array provides a number of advantages, including improved stability and accuracy, less noise and interference, and improved signal isolation. The use of transistors in an array also supports a range of applications, including digital signal processing (DSP) and communications systems, analog signal processing (ASP), radio frequency (RF) systems, and data conversion systems.

The 2N2919L transistors can be used in a range of applications, such as power supply controllers, communications line drivers, and battery chargers. The array also offers superior performance in both high-power and low-power applications, making it an ideal choice for a variety of applications.

Working Principle

The 2N2919L works by utilizing a common base configuration, which allows two transistors to share a common base lead. When this lead is driven by an appropriate current, it becomes active, allowing the two transistors to interact with each other. This interaction leads to a current gain (known as the βsi) that is higher than the current gains of either transistor when taken independently.

The common base configuration also provides superior noise and interferences immunity than other configurations. This ensures that the signals produced from the array are of high quality and their integrity is preserved. The array also offers improved signal isolation and can be used to process multiple signals without interference.

Conclusion

The 2N2919L is a two-transistor array that offers superior performance in both high-power and low-power applications. It utilizes a common base configuration, which allows two transistors to share a common base lead. This leads to a current gain (βsi) that is higher than the current gains of either transistor when taken independently, and also provides superior noise and interferences immunity. The array can be used in a range of applications, such as power supply controllers, communications line drivers, and battery chargers.

The specific data is subject to PDF, and the above content is for reference

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