2N2920U

Series:	--
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	30mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1mA, 5V
Power - Max:	350mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-SMD, No Lead
Supplier Device Package:	6-SMD

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The 2N2920U is an array of four NPN silicon bipolar transistors commonly used as an amplifier in a variety of applications. This multi-transistor package is available in three different types: TO-92, TO-18, and TO-95. Each transistor in the array shares a common emitter, a common base, and a common collector connection. The 2N2920U is most commonly used as a small-signal amplifier, able to amplify a signal from nanovolts to volts. It can be used in a variety of other applications, such as switching, level shifting, frequency conversion, and signal buffering. It is also used for DC voltage and current amplification, as well as for signal isolation. The 2N2920U is often used as a current source, providing constant current levels under varying load conditions.The device can operate in either a common-emitter or common-base configuration. In a common-emitter configuration, the 2N2920U’s transistors will operate in a linear fashion, meaning they can amplify both AC and DC signals. In a common-base configuration, the transistors will operate as switches, providing a gain of just 1. The maximum frequency of operation for the 2N2920U is approximately 300MHz, meaning it can be used for high-speed applications. The device is voltage and temperature-dependent, meaning its performance can vary based on changes in external conditions. This makes it important to understand how the device will perform under the desired operating conditions. The 2N2920U is made up of four individual transistors, each of which has different performance characteristics. The 4 transistors are arranged in a 2×2 matrix configuration, with two transistors per column and two transistors per row. This allows the device to switch between transistors in the array depending on the current level or input voltage applied. The 2N2920U has a high current gain (hfe), meaning it can amplify weak signals to larger voltages and currents. It is also able to withstand high voltages, up to 100 volts, making it suitable for use in high-voltage applications. The device also has low quiescent current, meaning it can be used in applications that require low power consumption. In summary, the 2N2920U is an array of four NPN silicon bipolar transistors that can be used in a variety of applications, including amplifying signals, switching, level shifting and frequency conversion. It can also be used as a current source, providing constant current levels under different operating conditions. The device has a maximum frequency of operation of 300MHz and high current gain, making it suitable for high-speed applications.

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