2N2907AE4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N2907AE4 is a small-signal general-purpose bipolar transistor commonly used in integrated circuits. While perfectly suitable for a wide range of applications, the 2N2907AE4 has particularly excellent performance and reliability for low-frequency (<600kHz) analog circuits, making it one of the most popular transistors for use in such applications.

The 2N2907AE4 belongs to the family of transistors known as Bipolar Junction Transistors (BJT). This family of transistors consists of two main types: NPN and PNP. The 2N2907AE4 is an NPN type transistor – meaning the current flows from the collector to the emitter when the base is forward biased. This is the opposite of a PNP transistor, which has the current flowing from the emitter to the collector when the base is forward biased.

The single 2N2907AE4 transistor is constructed of a single semiconductor layer. This layer is made of silicon and is composed of four sections known as collector, emitter, base, and substrate. When the transistor is forward biased, the emitter-base junction is activated and current flows from the collector to the emitter. This current is known as the collector current, and it is directly proportional to the base current. Since the base current is relatively low, it allows for the amplification of higher currents between the collector and the emitter.

The 2N2907AE4 has a wide range of applications, including audio amplifiers, video amplifiers, and power switching circuits. It is also an excellent choice for many power supply applications, such as battery-operated equipment, voltage regulators, and power switching. Additionally, the 2N2907AE4 is also commonly used as a static memory cell in computer memory circuits, and it can be used as a switching device in logic circuits.

The 2N2907AE4 works by using the idea of current amplification. As previously mentioned, it is constructed from a single semiconductor layer, and the current passes from the collector to the emitter when the base is forward biased. The base-emitter junction is known as a “saturation” region because it has the highest current gain of any other region in the transistor. This means that a small amount of current through the base will cause a much larger current to flow through the collector and the emitter. This mechanism is the basis for current amplification and is what makes this type of transistor so useful.

In addition to the current amplification, the 2N2907AE4 also has excellent thermal stability, meaning it is less likely to be susceptible to sudden temperature changes. This makes it a great choice for many types of applications, including applications that are exposed to significant temperature fluctuations. The 2N2907AE4 is also an inexpensive transistor, making it an affordable option for many applications.

The 2N2907AE4 is a small-signal general-purpose bipolar transistor that has excellent performance and reliability for low-frequency applications. It has a wide range of applications, including audio amplifiers, video amplifiers, power switching circuits, battery-operated equipment, voltage regulators, power supplies and static memory cells. The current amplification that is provided by the 2N2907AE4 makes it an ideal choice for many applications, and its thermal stability makes it a great choice for applications that are exposed to significant temperature variations. Inexpensive and reliable, the 2N2907AE4 is an excellent choice for all of your electronics needs.

The specific data is subject to PDF, and the above content is for reference