2N4402_D81Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 150mA, 2V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N4402

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Application Field and Working Principle of 2N4402_D81Z

2N4402_D81Z is a single transistor in the Bipolar Junction Transistor (BJT) series. It is used in a wide range of applications but is particularly suited to low current, low noise, low power, and low noise. It is the most basic type of BJT and its structure is simple and straightforward.The 2N4402_D81Z is a general-purpose NPN-type bipolar junction transistor. It has a collector current of 400mA and a collector–emitter voltage of 40V. It has a low saturation voltage, good hFE linearity, and low noise. The maximum frequency it can handle is about 1GHz, depending on conditions.This transistor is commonly used in a wide range of applications, such as audio amplifiers, logic circuits, and converters. It can also be used in switching and drive circuits, as well as low-frequency amplifiers.The 2N4402_D81Z has a simple three-terminal structure: the collector (C), the base (B), and the emitter (E). It is a bipolar transistor—a current-controlled current source—which means it can regulate the amount of current flowing from the collector to the emitter by controlling the voltage applied to the base. It works by having a majority of holes in the base region (B), which allows the electrons entering the collector region (C) to draw out upon heating the base. This in turn causes the electrons to be swept away from the base, leaving more space for the current to pass from the collector to the emitter.The 2N4402_D81Z is composed of an N-type semiconductor (the collector) surrounded by a P-type region (the base). The depletion layer between the N-type and P-type regions is generally very thin. This means that when a positive voltage is applied to the base of the transistor, a small current of electrons increases and current flows from the collector to the emitter.The 2N4402_D81Z can be used as an amplifier, oscillator, switch, or linear current regulator. It is particularly useful in low power, low noise, and low voltage devices because it has a low saturation voltage and good linearity. It also has low operating temperature, making it a good choice for demanding applications.The 2N4402_D81Z has a wide range of uses due to its low power consumption, low noise, low current, and low voltage. It can be used in audio amplifiers, logic circuits, converters, switching and drive circuits, as well as low-frequency amplifiers. It is also an ideal choice for applications where a low-cost solution is needed, as it is relatively inexpensive when compared to other transistors. Its small size makes it an attractive option for portable devices and other space-limited applications.In conclusion, the 2N4402_D81Z is a single transistor in the Bipolar Junction Transistor (BJT) series. It has a collector current of 400mA and a collector–emitter voltage of 40V and is useful in a variety of applications. It is a good choice for low voltage, low power, and low noise applications. It has a low saturation voltage and works by having a majority of holes in the base region (B). It is commonly used in audio amplifiers, logic circuits, converters, switching and drive circuits, and low-frequency amplifiers.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description