2N4403-AP Allicdata Electronics
Allicdata Part #:

2N4403-APTB-ND

Manufacturer Part#:

2N4403-AP

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PNP 40V TO92
More Detail: Bipolar (BJT) Transistor PNP 40V 200MHz 600mW Thr...
DataSheet: 2N4403-AP datasheet2N4403-AP Datasheet/PDF
Quantity: 12000
2000 +: $ 0.02024
6000 +: $ 0.01826
10000 +: $ 0.01588
50000 +: $ 0.01270
100000 +: $ 0.01191
200000 +: $ 0.01058
Stock 12000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Base Part Number: 2N4403
Description

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  • 2N4403-AP Application Field and Working Principle
  • Transistors - Bipolar (BJT) - Single
  • The 2N4403-AP is a single-transistor bipolar junction transistor (BJT) normally used in low-power amplifier circuits, such as for audio amplifiers. It is also known as an NPN bipolar junction transistor (NPN BJT) and is used in a variety of electronic circuitry.

    The 2N4403-AP is manufactured using high quality, semiconductor material and features low-noise gain control. This makes it ideal for applications requiring low-level noise, such as radio receiver circuits. The 2N4403-AP is also commonly used in current sensing circuits, voltage sensing circuits, and transistor applications that require current gain and voltage gain control.

    A single-transistor BJT device consists of a base, collector and emitter junction. It amplifies current by converting base current into collector current, since the collector-emitter current is affected by the base-emitter current. The transistor works as a switch that is used to control a larger current.

    The 2N4403-AP is built to be able to operate in a wide range of temperatures and is resistant to extreme environmental conditions. Its base current and collector-emitter saturation voltage can be controlled by designing circuits appropriately, as is often done with low-power amplifier circuits.

    The 2N4403-AP is generally characterized by its wide temperature range of operation and low noise levels. Its noise figures are lower than most other BJT devices, and its performance is improved by the use of an emitter resistor. Its collector to emitter saturation voltage is usually within 2V, making it suitable for operation in low voltage circuits and low power applications.

    Additionally, the 2N4403-AP has an excellent gain range and can be designed to provide the required gain and current gain control through designing of specific transistor circuits. Its transistors feature a small and flattering package and can be easily mounted to the printed circuit board.

    In conclusion, the 2N4403-AP is a single-transistor BJT device that is widely used in low-power amplifier circuits, and current and voltage sensing applications. It is known for its wide temperature range and low noise characteristics, and its ability to be designed for the desired gain and current gain control.

The specific data is subject to PDF, and the above content is for reference

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