
Allicdata Part #: | 2N4416A-E3-ND |
Manufacturer Part#: |
2N4416A-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 35V 5MA TO-206AF |
More Detail: | JFET N-Channel 35V 300mW Through Hole TO-206AF (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 2.5V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 4pF @ 15V |
Power - Max: | 300mW |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: | TO-206AF (TO-72) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2N4416A-E3 is a versatile type of transistor which can be used in various applications. It is primarily a JFET, or junction field effect transistor. JFETs are commonly used in analog circuits, such as audio amplifiers and current-limiting circuits. This type of transistor has many useful properties, making it the ideal choice for many applications.
As with many types of transistors, the 2N4416A-E3 is made up of three layers of doped silicon, each of which forms the "gate", "drain" and "source" of the transistor, respectively. The gate is the control terminal and is used to control the current flow through the transistor. The drain and source terminals allow current to flow between them, while the gate is used to control the amount of current that is allowed to pass.
The working principle of the 2N4416A-E3 is simple. When the gate voltage is increased, the current flow between the drain and source increases as well. This type of transistor is advantageous because it does not require high input current for operation, unlike standard bipolar transistors.
The 2N4416A-E3 is commonly used in RF power amplifiers, voltage followers, and voltage regulators. In RF power amplifiers, the 2N4416A-E3 can be used to amplify the small signal coming from the transmitter and increase the power output. In voltage followers, the 2N4416A-E3 can be used as a buffer between the input signal and the output load, providing protection to the load. Finally, in voltage regulators, the 2N4416A-E3 can be used to maintain a constant output voltage, regardless of fluctuations in the input voltage.
The 2N4416A-E3 is not just limited to the above applications, however. It can also be used in oscillators, switching regulators, and low-noise amplifiers. In oscillators, the transistor can be used to generate a periodic signal, such as a sine wave. In switching regulators, the 2N4416A-E3 can be used to control the flow of current in the regulator circuit. In low-noise amplifiers, the transistor can be used to reduce the noise in the output signal.
The 2N4416A-E3 is a versatile type of transistor which can be used in a wide range of applications. It is easy to use and can provide reliable results. Furthermore, its low input current requirements make it the ideal choice for many analog circuits. For these reasons, the 2N4416A-E3 is a popular choice amongst engineers and hobbyists alike.
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