
Allicdata Part #: | 2N4401D26ZTR-ND |
Manufacturer Part#: |
2N4401TFR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625m... |
DataSheet: | ![]() |
Quantity: | 34000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4401 |
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The 2N4401TFR is a bipolar (BJT) single transistor that can be used in a variety of applications. It is a medium power device with a maximum collector current of 50mA, with a voltage gain between 7 and 10.
The 2N4401TFR is typically used as a switch or amplifier, but can also be used for signal conditioning, radio frequency (RF) amplification, and many other applications. A typical application circuit of the 2N4401TFR is shown in Figure 1.
Figure 1. 2N4401TFR application circuit.
Working Principle
The 2N4401TFR bipolar (BJT) single transistor works on the principle of current gain. The base-emitter junction of the transistor is used to control current between the collector and the emitter. When a small current is applied to the base-emitter junction, a much larger current can be produced from the collector to the emitter. This is known as current gain or amplification.
In the application circuit shown in Figure 1, the voltage source is used to drive a current to the base-emitter junction of the 2N4401TFR. This small current is then amplified by the transistor and a much larger current flows from the collector to the emitter. The amplified voltage can then be used to drive some external load, such as an LED or a motor.
Other Uses of the 2N4401TFR
In addition to amplifying or switching a signal, the 2N4401TFR can be used for a variety of other purposes such as signal conditioning or radio frequency (RF) amplification. For example, the 2N4401TFR can be used for RF amplification by connecting the base to some RF signal source (such as an antenna) and the collector to a load (such as an output power amplifier). The RF signal on the base is then amplified by the transistor and the amplified voltage can be used to drive the load.
The 2N4401TFR is also capable of signal conditioning by applying the input signal to the base and the output signal to the emitter. This allows the transistor to act as an adjustable low-pass filter, allowing only frequencies below a certain cut-off frequency to pass through the transistor. This can be used, for example, to reduce noise in a signal or to filter out unwanted frequencies.
Conclusion
The 2N4401TFR is a versatile single bipolar (BJT) transistor that can be used for a variety of applications such as amplifying or switching signals, signal conditioning, and RF amplification. While the transistor is relatively simple to use, its versatility allows for complex applications to be built with just one component.
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